Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN4232
2SJ256
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2.4
1
23
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
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erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
PD
D
SSD
SSG
PW≤10µs, duty cycle≤1%
Tc=25°C
Package Dimensions
unit:mm
2063A
[2SJ256]
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
03–V
51±V
81–A
27–A
0.2W
03W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
I
SSD)RB(
D
I
SSG)RB(
G
V
SSD
V
SSG
V
)ffo(SG
I
)no(SD
D
I
)no(SD
D
V,Am1–=
0=03–V
SG
V,Aµ001±=
0=51±V
SD
V,V03–=
SD
SG
SD
0=001–Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–0.2–V
D
A01–=5.841S
D
V,A01–=
V,A01–=
V01–=0455mΩ
SG
V4–=5557mΩ
SG
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40199TH (KT)/42893TH (KOTO) AX-8376 No.4232–1/4
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Continued on next page.
2SJ256
Continued from preceding page.
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emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
zHM1=f,V01–=0002Fp
zHM1=f,V01–=0021Fp
zHM1=f,V01–=044Fp
tiucriCtseTdeificepseeS81sn
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS004sn
tiucriCtseTdeificepseeS004sn
V,A81–=
0=0.1–5.1–V
SG
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No.4232–2/4