Sanyo 2SJ194 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN3767
2SJ194
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
Package Dimensions
unit:mm
2083B
[2SJ194]
0.85
0.7
0.6
4
1
2.3
6.5
5.0
0.8
23
2.3
1.5
7.0
5.5
1.6
7.5
0.5
2.3
unit:mm
2092B
6.5
5.0
[2SJ194]
1.55.5
2.3
0.5
1.2
1 : Gate
2 : Drain
3 : Source
SANYO : TP
0.5
7.0
0.85
1243
0.6
2.3 2.3
0.8
0.5
2.5
0 to 0.2
40199TH (KT)/41293TH (KOTO) 8-7545, 7921 No.3767–1/4
1.2
1.2
1 : Gate
2 : Drain
3 : Source
SANYO : TP-FA
2SJ194
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
SSD
SSG
D
PW≤10µs, duty cycle≤1%
PD
Tc=25˚C
D
I
SSD)RB(
D
I
SSG)RB(
G
V
SSD
V
SSG
V
)ffo(SG
R
R
I
)no(SD
D
I
)no(SD
D
)no(d
r
)ffo(d
f
I
DS
S
V,Am1–=
0=001– V
SG
V,Aµ001±=
0=51±V
SD
V,V001–=
SD
SG
SD
V,A1–=
V,A1–=
SD
SD
SD
V,A2–=
0=001– Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1– 0.2– V
D
A1–=2.12 S
D
V01–=7.059.0
SG
V4–=59.03.1
SG
zHM1=f,V02–=083Fp
zHM1=f,V02–=001Fp
zHM1=f,V02–=02Fp
tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS41sn
tiucriCtseTdeificepseeS57sn
tiucriCtseTdeificepseeS04sn
0=0.1– 5.1– V
SG
sgnitaR
nimpytxam
001– V
51±V
2– A
8– A
02W
˚C
˚C
tinU
Ω
Ω
Switching Time T est Circuit
No.3767–2/4
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