Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN3766
2SJ193
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
PD
D
SSD
SSG
PW≤10µs, duty cycle≤1%
Tc=25˚C
Package Dimensions
unit:mm
2062A
[2SJ193]
4.5
1.6
0.4
3
2
mm052(draobcimarecnodetnuoM
0.5
1
2
1.5
3.0
0.75
× )mm8.05.1W
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
001–V
51±V
1–A
4–A
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
I
SSD)RB(
D
V
SSD
V
SSG
V
)ffo(SG
I
)no(SD
D
I
)no(SD
D
V,Am1–=
0=001–V
SG
V,V001–=
SD
SG
SD
0=001–Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–0.2–V
D
D
V,Am005–=
V,Am005–=
Am005–=6.00.1S
V01–=8.14.2
SG
V4–=4.25.3
SG
40199TH (KT)/41293TH (KOTO) 8-7544 No.3766–1/4
sgnitaR
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Continued on next page.
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Ω
Ω
2SJ193
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
V,A1–=
S
Switching Time T est Circuit
zHM1=f,V02–=061Fp
zHM1=f,V02–=04Fp
zHM1=f,V02–=6Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS31sn
tiucriCtseTdeificepseeS07sn
tiucriCtseTdeificepseeS03sn
0=9.0– V
SG
sgnitaR
nimpytxam
tinU
No.3766–2/4