Sanyo 2SD895 Specifications
Ordering number:679F
2SB775 : PNP Epitaxial Planar Silicon Transistor
2SD895 : NPN Triple Diffused Planar Silicon Transistor
2SB775/2SD895
85V/6A, AF 35W Output Applications
Features
· Wide ASO because of on-chip ballast resistance.
· Capable of being mounted easily becasuse of onepoint fixing type plastic molded package
(Interchangeable with TO-3).
· Large current capacity : IC=6A
· Highly resistance breakdown due to wide ASO.
( ) : 2SB775
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot04–
OBC
OEC
OBE
C
PC
C
Tc=25˚C
Package Dimensions
unit:mm
2022A
[2SB775/2SD895]
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
001)–(V
58)–(V
6)–(V
6)–(A
01)–(A
06W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
hEF2VECI,V5)–(=
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVrettimE-ot-esaBV
egatloVnoitarutaSrettimE-ot-rotcelloCV
OBC
OBE
1VECI,V5)–(=
EF
T
bo
EB
)tas(EC
V
BC
V
BE
V
EC
V
BC
V
EC
I
C
I,V04)–(=
0=1.0)–(Am
E
I,V4)–(=
0=1.0)–(Am
C
A1)–(=
C
A3)–(=
C
I,V5)–(=
A1)–(=
C
zHM1=f,V01)–(=061Fp
I,V5)–(=
A1)–(=5.1)–(V
C
I,A4)–(=
A4.0)–(=
B
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/1116MW, TS-3634/7039 No.679–1/4
sgnitaR
*06*002
02
51)81(zHM
)4.1–()0.2–(V
9.00.2V
tinU
2SB775/2SD895
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
emITNO-nruTt
emiTegarotSt
emiTllaFt
I
OBC)RB(
C
I
OEC)RB(
C
I
C
I
OBE)RB(
E
no
gts
f
I,Am5)–(=
0=001)–(V
E
R,Am5)–(=
=∞ 58)–(V
EB
R,Am05)–(=
=∞ 58)–(V
EB
I,Am5)–(=
0=6)–(V
C
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
* : The 2SB775/2SD895 are classified by 1A hFE as follows :
021D06002E001
Switching Time T est Circuit
sgnitaR
nimpytxam
)21.0(sµ
02.0sµ
)63.0(sµ
28.0sµ
)92.1(sµ
88.3sµ
tinU
No.679–2/4
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