Sanyo 2SD879 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
1.5V, 3V Strobe Applications
Ordering number:EN550F
2SD879
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Features
· In applications where two NiCd batteries are used to
provide 2.4V, two 2SD879s are used.
· The charge time is approximately 1 second faster
than that of germanium transistors.
· Less power dissipation because of low Collector-toEmitter Voltage V
, permitting more flashes of
CE(sat)
light to be emitted.
· Small package and large allowable collector dissipation (TO-92, PC=750mW).
· Large current capacity and highly resistant to breakdown.
· Excellent linearity of hFE in the region from low
current to high current.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVrettimE-ot-rotcelloC
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
V
XEC
V
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2003B
[2SD879]
1 : Emitter
2 : Collector
3 : Base
JEDEC : T O-92
EIAJ : SC-43
SANYO : NP
03V
02V
01V
6V
3A
eslupelgnissm001 5A
057Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
h
V
OBC
V
OBE
V
EF
V
T
V
bo
I
)tas(EC
C
I,V02=
BC
BE
EC
EC
BC
0=0.1Aµ
E
I,V4=
0=0.1Aµ
C
I,V2=
C
I,V01=
C
I,A3=
B
)eslup(A3=
Am05=
zHM1=f,V01=
)eslup(Am06=
21599TH (KT)/N1596TS (KOTO) 8-3475/5137KI/3075KI/5244KI, TS No.550–1/4
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002zHM
03Fp
3.04.0V
Continued on next page.
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Continued from preceding page.
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2SD879
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egatloVnwodkaerBrettimE-ot-rotcelloC
egatloVnwodkaerBesaB-ot-rettimEV
V
V
I
OBC)RB(
I
XEC)RB(
I
OEC)RB(
I
OBE)RB(
I,Aµ01=
C
C
C
E
0=
E
V,Am1=
V3=
EB
R,Am1=
=∞
EB
I,Aµ01=
0=
C
sgnitaR
nimpytxam
03V
02V
01V
6V
tinU
No.550–2/4
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