Sanyo 2SD826 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
20V/5A Switching Applications
Ordering number:EN538E
2SD826
Features
· Low saturation voltage.
· High hFE.
· Large current capacity.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2009A
[2SD826]
8.0
4.0
11.0
3.0
7.0
1.6
0.8
0.8
0.6
123
2.4
OBC OEC OBE
eslup1,sm001 8A
Tc=25˚C
1.5
3.0
15.5
1.2
4.8
2.7
0.5
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126
06V 02V 6V 5A
0.1W 01W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
hEF1VECI,V2= hEF2VECI,V2=
V
OBC
V
OBE
V
T
V
bo
I,V05=
BC BE
EC BC
0=0.1Aµ
E
I,V5=
0=0.1Aµ
C
A5.0=
C C
I,V01=
C
)esluP(A3=
Am05=
zHM1=f,V01=
* : The 2SD826 is classified by 0.5A hFE as follows.
002E021023F061065G082
21599TH (KT)/5277KI/3115KI/5244KI, TS No.538–1/5
nimpytxam
59
sgnitaR
*021*065
021zHM 54Fp
Continued on next page.
tinU
2SD826
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
)tas(EC
)tas(EB no gts
f
I,A3=
C
B
I
I,A3=
C
B
)esluP(Am06= )esluP(Am06=5.1V
.tiucrictsetdeificepseeS .tiucrictsetdeificepseeS .tiucrictsetdeificepseeS
sgnitaR
nimpytxam
03sn 003sn 04sn
tinU
5.0V
No.538–2/5
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