SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
20V/5A Switching Applications
Ordering number:EN538E
2SD826
Features
· Low saturation voltage.
· High hFE.
· Large current capacity.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2009A
[2SD826]
8.0
4.0
11.0
3.0
7.0
1.6
0.8
0.8
0.6
123
2.4
OBC
OEC
OBE
eslup1,sm001 8A
Tc=25˚C
1.5
3.0
15.5
1.2
4.8
2.7
0.5
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
06V
02V
6V
5A
0.1W
01W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
hEF1VECI,V2=
hEF2VECI,V2=
V
OBC
V
OBE
V
T
V
bo
I,V05=
BC
BE
EC
BC
0=0.1Aµ
E
I,V5=
0=0.1Aµ
C
A5.0=
C
C
I,V01=
C
)esluP(A3=
Am05=
zHM1=f,V01=
* : The 2SD826 is classified by 0.5A hFE as follows.
002E021023F061065G082
21599TH (KT)/5277KI/3115KI/5244KI, TS No.538–1/5
nimpytxam
59
sgnitaR
*021*065
021zHM
54Fp
Continued on next page.
tinU
2SD826
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
)tas(EC
)tas(EB
no
gts
f
I,A3=
C
B
I
I,A3=
C
B
)esluP(Am06=
)esluP(Am06=5.1V
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
sgnitaR
nimpytxam
03sn
003sn
04sn
tinU
5.0V
No.538–2/5