Sanyo 2SD613P Specifications
Ordering number : ENN6662
2SB633P/2SD613P
PNP / NPN Epitaxial Planar Silicon Transistors
2SB633P / 2SD613P
85V / 6A, AF 35 to 45W Output Applications
Features
• High breakdown voltage, V
high current 6A.
• AF 35 to 45W output.
Specifications
( ) : 2SB633P
CEO
85V,
Package Dimensions
unit : mm
2010C
[2SB633P / 2SD613P]
10.2
3.6
18.0
5.6
123
2.55
5.1
1.2
0.8
2.55
2.7
2.7
6.3
15.1
14.0
4.5
1.3
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg −55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C60W
(−)100 V
(−)85 V
(−)6 V
(−)6 A
(−)10 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
CBO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=(--)40V, IE=0 (--)0.1 mA
VEB=(--)4V, IC=0 (--)0.1 mA
Continued on next page.
13001 TS IM TA-3082
Unit
No.6662-1/4
2SB633P/2SD613P
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (150)110 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)4A, IB=(--)0.4A (--)2.0 V
Base-to-Emitter Voltage V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Fall Time t
Storage Time t
* : The 2SB633P / 2SD613P are classified by 1A hFE as follows :
Rank DE F
hFE60 to 120 100 to 200 160 to 320
hFE1VCE=(--)5V, IC=(--)1A 40* 320*
hFE2VCE=(--)5V, IC=(--)3A 20
VCE=(--)5V, IC=(--)1A 15 MHz
T
BE
(BR)CBOIC
(BR)CEO
(BR)EBOIE
on
stg
VCE=(--)5V, IC=(--)1A (--)1.5 V
=(--)5mA, IE=0 (--)100 V
IC=(--)5mA, RBE=∞ (--)85 V
IC=(--)50mA, RBE=∞ (--)85 V
=(--)5mA, IC=0 (--)6 V
See specified test circuit.
See specified test circuit.
f
See specified test circuit.
Ratings
min typ max
(0.16)0.28
(0.33)0.50
(1.45)3.60
Swicthing Time Test Circuit
I
B1
PW=20µs
INPUT
51Ω
1Ω
I
B2
200V
R
1µF1µF
OUTPUT
20Ω
VCC=20V
Unit
µs
µs
µs
--5
--4
-- A
C
--3
--2
Collector Current, I
--1
VBE= --2V
--100mA
--80mA
IC -- V
--60mA
--40mA
10IB1= --10IB2=IC=1A
For PNP, the polarity is reversed.
CE
2SB633P
--20mA
--10mA
5
4
-- A
C
3
2
Collector Current, I
1
100mA
80mA
I
-- V
C
CE
60mA
40mA
20mA
2SD613P
10mA
0
0 --10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE -- V
IB=0
IT02142
0
0 1020304050
Collector-to-Emitter Voltage, VCE -- V
IB=0
IT02143
No.6662-2/4
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