Sanyo 2SD613P Specifications

Ordering number : ENN6662

2SB633P/2SD613P

PNP / NPN Epitaxial Planar Silicon Transistors

2SB633P / 2SD613P

85V / 6A, AF 35 to 45W Output Applications

Features

• High breakdown voltage, V

high current 6A.

• AF 35 to 45W output.

Specifications

( ) : 2SB633P

CEO

85V,

Package Dimensions

unit : mm

2010C

[2SB633P / 2SD613P]

10.2

3.6

18.0

5.6

123

2.55

5.1

1.2

0.8

2.55

2.7

2.7

6.3

15.1

14.0

4.5

1.3

0.4

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg −55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C60W

(−)100 V

(−)85 V

(−)6 V
(−)6 A

(−)10 A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I

CBO

EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=(--)40V, IE=0 (--)0.1 mA
VEB=(--)4V, IC=0 (--)0.1 mA

Continued on next page.

13001 TS IM TA-3082

Unit

No.6662-1/4

2SB633P/2SD613P

Continued from preceding page.

Parameter Symbol Conditions

DC Current Gain
Gain-Bandwidth Product f

Output Capacitance Cob VCB=(--)10V, f=1MHz (150)110 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)4A, IB=(--)0.4A (--)2.0 V
Base-to-Emitter Voltage V
Collector-to-Base Breakdown Voltage V

Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V

Turn-ON Time t
Fall Time t
Storage Time t

* : The 2SB633P / 2SD613P are classified by 1A hFE as follows :

Rank DE F

hFE60 to 120 100 to 200 160 to 320

hFE1VCE=(--)5V, IC=(--)1A 40* 320*
hFE2VCE=(--)5V, IC=(--)3A 20

VCE=(--)5V, IC=(--)1A 15 MHz

T

BE

(BR)CBOIC
(BR)CEO
(BR)EBOIE

on

stg

VCE=(--)5V, IC=(--)1A (--)1.5 V

=(--)5mA, IE=0 (--)100 V
IC=(--)5mA, RBE=∞ (--)85 V
IC=(--)50mA, RBE=∞ (--)85 V

=(--)5mA, IC=0 (--)6 V
See specified test circuit.
See specified test circuit.

f

See specified test circuit.

Ratings

min typ max

(0.16)0.28
(0.33)0.50
(1.45)3.60

Swicthing Time Test Circuit

I

B1

PW=20µs

INPUT

51Ω

1Ω

I

B2

200V

R

1µF1µF

OUTPUT

20Ω

VCC=20V

Unit

µs
µs
µs

--5

--4

-- A
C

--3

--2

Collector Current, I

--1

VBE= --2V

--100mA

--80mA

IC -- V

--60mA

--40mA

10IB1= --10IB2=IC=1A
For PNP, the polarity is reversed.

CE

2SB633P

--20mA

--10mA

5

4

-- A
C

3

2

Collector Current, I

1

100mA

80mA

I

-- V

C

CE

60mA

40mA

20mA

2SD613P

10mA

0

0 --10 --20 --30 --40 --50

Collector-to-Emitter Voltage, VCE -- V

IB=0

IT02142

0

0 1020304050

Collector-to-Emitter Voltage, VCE -- V

IB=0

IT02143

No.6662-2/4

IC -- V

5

BE

2SB633P / 2SD613P
VCE=5V

4

-- A
C

3

2

Collector Current, I

1

0

0.4 0.6 0.8 1.0 1.2 1.4

(For PNP minus sign is omitted) (For PNP minus sign is omitted)

Base-to-Emitter V oltage, VBE -- V

FE

100

3

2

hFE -- I

2SB633P

7
5

2SD613P

C

2SB633P/2SD613P

100

7
5

-- MHz
T

3

2

10

7
5

Gain-Bandwidth Product, f

3

IT02144

VCE=5V

1000

7
5

3

2

fT -- I

C

VCE=5V

2SD613P

2SB633P

33557722

Collector Current, I

1.0 100.1

Cob -- V

CB

C

-- A

IT02145

f=1MHz

2SB633P

2SD613P

3

DC Current Gain, h

2

10

5

3
2

1.0

(sat) -- V

7

CE

5

3
2

0.1
7

Collector-to-Emitter

Saturation V oltage, V

5
3

2

10

7
5

-- A

3

C

2

23 57 2357

0.1

ICP=10A
IC=6A

3527 3527

Collector Current, IC -- A

1.0 100.1

VCE(sat) -- I

IT02146

C

IC / IB=10

2SD613P

2SB633P

(For PNP minus sign is omitted) (For PNP minus sign is omitted)

Collector Current, IC -- A

1.0 10

IT02148

A S O

2SB633P / 2SD613P

10ms

DC operation

100ms

100

7

Output Capacitance, Cob -- pF

5

(For PNP minus sign is omitted)(For PNP minus sign is omitted)

3

1.0

5

3

2

(sat) -- V

BE

1.0

7

5

Base-to-Emitter

Saturation V oltage, V

3

0.1

70

60

-- W

50

C

40

23 57 23 57

Collector-to-Base Voltage, V

VBE(sat) -- I

CB

C

-- V

IT02147

IC / IB=10

2SB633P

2SD613P

23 57723 5

Collector Current, IC -- A

1.0 10

IT02149

PC -- Tc

2SB633P / 2SD613P

10010

1.0
7
5

Collector Current, I

3
2

(For PNP minus sign is omitted) (For PNP minus sign is omitted)

0.1

5537722

10 100

Collector-to-Emitter Voltage, VCE -- V

IT02150

30

20

Collector Dissipation, P

10

0

4020 60 80 100 120 140 1600

Case Tamperature, Tc -- °C

IT02151

No.6662-3/4

2SB633P/2SD613P

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.

No.6662-4/4

PS