Sanyo 2SD612K Specifications
Ordering number:341G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency
Power Amplifier Applications
Features
· High collector dissipation and wide ASO.
( ) : 2SB632, 632K
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkarBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
* : The 2SB632/2SD612 are classified by 500mA hFE as follows :
OBC
OEC
OBE
C
PC
C
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
V
OBC
V
OBE
Tc=25˚C
C
C
E
BC
BE
Package Dimensions
unit:mm
2009B
[2SB632, 632K/2SD612, 612K]
1 : Emitter
2 : Collector
3 : Base
JEDEC : TO-126
52)–(53)–(V
52)–(53)–(V
5)–(V
2)–(A
3)–(A
1W
01W
˚C
˚C
sgnitaR
nimpytxam
I,Aµ01)–(=
0=
E
R,Am1)–(=
=∞
EB
I,Aµ01)–(=
0=5)–(V
C
I,V02)–(=
0=1)–(Aµ
E
I,V4)–(=
0=1)–(Aµ
C
021D06002E001023F061
216D,236B52)–(V
K216D,K236B53)–(V
216D,236B52)–(V
K216D,K236B53)–(V
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/D174MW, TS/E108, 8-2176 No.341–1/9
2SB632, 632K/2SD612, 612K
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niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
emiTNO-nruTt
emiTllaFt
emiTegarotSt
hEF1V
hEF2V
T
bo
no
f
gts
EC
EC
V
EC
V
BC
I
)tas(EC
C
I
)tas(EB
C
I,V2)–(=
C
I,V2)–(=
C
I,V01)–(=
C
I,A5.1)–(=
B
I,A5.1)–(=
B
Switching Time T est Circuit
sgnitaR
nimpytxam
Am005)–(=*06*023
A5.1)–(=03
Am05)–(=001zHM
zHM1=f,V01)–(=03)54(Fp
A51.0)–(=
A51.0)–(=1.1)–(5.1)–(V
tiucriCtseTdeificepseeS05)06(sn
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
)4.0–()9.0–(V
3.08.0V
)08(sn
001sn
004sn
tinU
No.341–2/9
2SB632, 632K/2SD612, 612K
No.341–3/9
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