Sanyo 2SD600K Specifications
Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Features
· High breakdown voltage V
current 1A.
· Low saturation voltage, excellent hFE linearity.
( ) : 2SB631, 631K
100/120V, High
CEO
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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Electrical Characteristics at Ta = 25˚C
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Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
1 : Emitter
2 : Collector
3 : Base
JEDEC : TO-126
OBC
OEC
OBE
Tc=25˚C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
V
OBC
V
OBE
I,Aµ01)–(=
0=
E
R,Am1)–(=
=∞
EB
I,Aµ01)–(=
0=5)–(V
C
I,V05)–(=
BC
BE
0=1)–(Aµ
E
I,V4)–(=
0=1)–(Aµ
C
006D,136B001)–(V
K006D,K136B021)–(V
006D,136B001)–(V
K006D,K136B021)–(V
001)–(021)–(V
001)–(021)–(V
5)–(V
1)–(A
2)–(A
1W
8W
˚C
˚C
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4
2SB631, 631K/2SD600, 600K
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hEF1VECI,V5)–(=
hEF2VECI,V5)–(=
V
T
bo
f
ffo
gts
EC
V
BC
I
)tas(EC
C
I
)tas(EB
C
C
C
Am05)–(=*06*023
Am005)–(=02
I,V01)–(=
C
I,Am005)–(=
I,Am005)–(=
Am05)–(=
zHM1=f,V01)–(=02)03(Fp
B
B
Am05)–(=51.0)–(4.0)–(V
Am05)–(=58.0)–(2.1)–(V
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* : The 2SB631/2SD600 are classified by 50mA hFE as follows :
021D06002E001023F061
Switching Time T est Circuit
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001sn
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005sn
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No.346–2/4
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