Sanyo 2SD2658LS Specifications

Ordering number : ENN7168

2SD2658LS

NPN Triple Diffused Planar Silicon Transistor

2SD2658LS

Color TV Horizontal Deflection

Output Applications

Features

•

High speed.

•

High breakdown voltage (V

•

High reliability (Adoption of HVP process).

•

Adoption of MBIT process.

•

On-chip damper diode.

CBO

=1500V).

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C25W

Package Dimensions

unit : mm

2079D

[2SD2658LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI(LS)

1500 V

800 V

3.5 A

2.0 W

5V

9A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Collector Cutoff Current I
Collector Sustain Voltage V
Emitter Cutoff Current I

CBO
CES

CEO

EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=800V, IE=0 10 µA
VCE=1500V , RBE=0 1.0 mA

(sus) IC=100mA, IB=0 800 V

VEB=4V, IC=0 40 130 mA

Continued on next page.

13002 TS IM TA-3531

No.7168-1/4

Unit

2SD2658LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage VCE(sat) IC=1.8A, IB=0.36A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=1.8A, IB=0.36A 1.5 V

DC Current Gain
Diode Forward Voltage V

Fall Time t

hFE1VCE=5V, IC=0.5A 5
hFE2VCE=5V, IC=2A 5 8

IEC=3A 2 V

F

IC=1.2A, IB1=0.24A, IB2=--0.48A 0.3 µs

f

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

Unit

3.5

3.0

INPUT

1.0A

50Ω

0.9A

R

V

B

R

+

100µF 470µF

IC -- V

+

VCC=200VVBE= --2V

CE

0.8A

0.7A

0.6A

0.5A

2.5

-- A
C

2.0

0.4A

0.3A

0.2A

1.5

1.0

0.1A

Collector Current, I

0.5

0

012345678910

I

Collector-to-Emitter Voltage, VCE -- V

3

2

hFE -- I

C

VCE=5V

°C

Ta=120

FE

10

7

5

3

DC Current Gain, h

2

1.0

0.1

°C

25

°C

--40

Collector Current, I

7

1.0

C

352

-- A

RL=167Ω

=0

B

IT02803

IT02805

4.0

3.5

3.0

-- A
C

2.5

2.0

1.5

1.0

Collector Current, I

0.5

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

IC -- V

Base-to-Emitter Voltage, VBE -- V

5

3
2

-- V

1.0

(sat)

7

CE

5

3
2

Ta= --40

25

0.1

Collector-to-Emitter

Saturation V oltage, V

7352

°C

7

°C

120

5
3

0.1

VCE(sat) -- I

°C

352

Collector Current, I

BE

VCE=5V

°C

°C

°C

25

--40

Ta=120

IT02804

C

IC / IB=5

73527

1.0

C

-- A

IT02806

No.7168-2/4

2SD2658LS

7
5

3

2

SW Time -- I

t

stg

C

IC / IB1=5
IB2 / IB1=2
R load

10

7
5

3
2

SW Time -- I

t

stg

B2

IC=1.2A
IB1=0.24A
R load

1.0
7

5

3

Switching Time, SW Time -- µs

2

0.1

0.1

2

ICP=9A

10

7
5

IC=3.5A

3

-- A

2

C

1.0
7
5

3
2

0.1
7

Collector Current, I

5
3

Tc=25

°C

2

Single pulse

0.01

1.0

352

Collector-to-Emitter Voltage, V

2.5

t

f

7

1.0

Collector Current, I

C

352

-- A

7352

IT02807

Forward Bias A S O

P
T

CE

300µs

-- V

=100

IT02809

µ

s

1000

P

C

=25W

1ms

10ms

DC operation

P

C

352107

-- Ta

100

73527

1.0
7

5

3

Switching Time, SW Time -- µs

2

0.1

0.1

2

10

7
5

-- A
C

3
2

1.0
7
5

Collector Current, I

3
2

0.1

10

Collector-to-Emitter Voltage, V

30

t

f

352

7

1.0

Base Current, IB2 -- A

32

IT02808

Reverse Bias A S O

L=500µH
I

= --1A

B2

Tc=25°C
Single pulse

352

CE

7

1000

-- V

IT02810

352

732

100

P

-- Tc

C

2.0

-- W
C

1.5

1.0

0.5

Collector Dissipation, P

0

0 20 40 60 80 100 120 140 160

No heat sink

Ambient Temperature, Ta -- °C

IT02811

25

-- W
C

20

15

10

Collector Dissipation, P

5

0

0 20 40 60 80 100 120 140 160

Case Temperature, Tc -- °C

IT02812

No.7168-3/4

2SD2658LS

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.

No.7168-4/4

PS