Sanyo 2SD2658LS Specifications

Ordering number : ENN7168

2SD2658LS

NPN Triple Diffused Planar Silicon Transistor

2SD2658LS

Color TV Horizontal Deflection

Output Applications

Features

•

High speed.

•

High breakdown voltage (V

•

High reliability (Adoption of HVP process).

•

Adoption of MBIT process.

•

On-chip damper diode.

CBO

=1500V).

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C25W

Package Dimensions

unit : mm

2079D

[2SD2658LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220FI(LS)

1500 V

800 V

3.5 A

2.0 W

5V

9A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Collector Cutoff Current I
Collector Sustain Voltage V
Emitter Cutoff Current I

CBO
CES

CEO

EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=800V, IE=0 10 µA
VCE=1500V , RBE=0 1.0 mA

(sus) IC=100mA, IB=0 800 V

VEB=4V, IC=0 40 130 mA

Continued on next page.

13002 TS IM TA-3531

No.7168-1/4

Unit

2SD2658LS

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage VCE(sat) IC=1.8A, IB=0.36A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=1.8A, IB=0.36A 1.5 V

DC Current Gain
Diode Forward Voltage V

Fall Time t

hFE1VCE=5V, IC=0.5A 5
hFE2VCE=5V, IC=2A 5 8

IEC=3A 2 V

F

IC=1.2A, IB1=0.24A, IB2=--0.48A 0.3 µs

f

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

Unit

3.5

3.0

INPUT

1.0A

50Ω

0.9A

R

V

B

R

+

100µF 470µF

IC -- V

+

VCC=200VVBE= --2V

CE

0.8A

0.7A

0.6A

0.5A

2.5

-- A
C

2.0

0.4A

0.3A

0.2A

1.5

1.0

0.1A

Collector Current, I

0.5

0

012345678910

I

Collector-to-Emitter Voltage, VCE -- V

3

2

hFE -- I

C

VCE=5V

°C

Ta=120

FE

10

7

5

3

DC Current Gain, h

2

1.0

0.1

°C

25

°C

--40

Collector Current, I

7

1.0

C

352

-- A

RL=167Ω

=0

B

IT02803

IT02805

4.0

3.5

3.0

-- A
C

2.5

2.0

1.5

1.0

Collector Current, I

0.5

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

IC -- V

Base-to-Emitter Voltage, VBE -- V

5

3
2

-- V

1.0

(sat)

7

CE

5

3
2

Ta= --40

25

0.1

Collector-to-Emitter

Saturation V oltage, V

7352

°C

7

°C

120

5
3

0.1

VCE(sat) -- I

°C

352

Collector Current, I

BE

VCE=5V

°C

°C

°C

25

--40

Ta=120

IT02804

C

IC / IB=5

73527

1.0

C

-- A

IT02806

No.7168-2/4