Sanyo 2SD2650 Specifications

Page 1
Ordering number : ENN6781A
2SD2650
NPN Triple Diffused Planar Silicon Transistor
2SD2650
Color TV Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage(V
High reliability(Adoption of HVP process).
Adoption of MBIT process.
=1500V).
Specifications
Package Dimensions
unit : mm
2174A
[2SD2650]
3.4
16.0
5.0
2.8
0.7
22.0
2.0
20.4
3.5
21.0
5.45
4.0
123
5.45
5.6
3.1
8.0
0.8
2.1
0.9
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-3PMLH
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I
Collector Dissipation P Junction T emperature Tj 150 °C
Storage T emperature T stg -55 to +150 °C
CBO CEO EBO
C
CP
C
Tc=25°C65W
1500 V
700 V
5V 8A
20 A
3.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I Collector Cutoff Current I Collector Sustain Voltage V Emitter Cutoff Current I
CBO CES
CEO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max VCB=800V, IE=0 10 µA VCE=1500V , RBE=0 1.0 mA
(sus) IC=100mA, IB=0 700 V
VEB=4V, IC=0 1 mA
Unit
Continued on next page.
52101 TS IM TA-3147 / N3000 TS IM TA-3012
No.6781-1/4
Page 2
2SD2650
Continued from preceding page.
Parameter Symbol Conditions
Collector-to-Emitter Saturation Voltage VCE(sat) IC=4.5A, IB=0.9A 3 V Base-to-Emitter Saturation Voltage VBE(sat) IC=4.5A, IB=0.9A 1.5 V
DC Current Gain Fall Time t
hFE1VCE=5V, IC=1A 10 hFE2VCE=5V, IC=5A 5 8
IC=3A, IB1=0.6A, IB2=--1.2A 0.3 µs
f
min typ max
Switching Time Test Circuit
I
PW=20µs D.C.≤1%
B1
I
B2
OUTPUT
Ratings
Unit
INPUT
8
1.8A
7
2.0A
6
-- A C
5
4
3
2
Collecotr Current, I
1
0
0
Collector-to-Emitter Voltage, VCE -- V
7
Ta=120
5
3 2
FE
10
7 5
DC Current Gain, h
3 2
1.0
0.1
°C
25°C
--40°C
23 57
R
R
100µF 470µF
I
C
B
+
-- V
CE
R
L
66.7
+
VCC=200VVBE= --2V
V
50
1.6A
1.4A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
0.05A
I
=0
3214108769
h
FE
5
-- I
C
B
IT02643
VCE=5V
Collector Current, IC -- A
1.0 10
23 57
IT02645
9
8
7
-- A
6
C
5
4
3
Collector Current, I
2
1
0
0
5
3 2
1.0
(sat) -- V
7
CE
5
3 2
0.1
Ta= --40
7
Collector-to-Emitter
Saturation V oltage, V
5
120°C
3
0.1
I
-- V
C
BE
VCE=5V
25°C
--40°C
Ta=120°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter V oltage, VBE -- V
VCE(sat) -- I
C
IT02644
IC / IB=5
25°C
°C
23 57
Collector Current, IC -- A
1.0 10
23 57
IT02646
No.6781-2/4
Page 3
2SD2650
7 5
3 2
SW Time -- I
C
VCC=200V
t
stg
IC / IB1=5 IB2 / IB1=2 R load
10
7 5
3 2
SW Time -- I
t
stg
B2
VCC=200V IC=3A IB1=0.6A R load
1.0 7 5
3
Switching Time, SW Time -- µs
2
0.1
0.1
5 3
2
10
7 5
-- A
3
C
2
1.0 7 5
3 2
0.1
Collector Current, I
7 5
3 2
0.01
1.0
23 57
ICP=20A IC=8A
Tc=25°C Single pulse
23 571023 57
Collector-to-Emitter Voltage, VCE -- V
3.5
3.0
t
f
1.0 10
23 57
Collector Current, IC -- A
Forward Bias A S O
P
C
=65W
10ms
DC operation
100 1000
P
-- Ta
C
P
T
300µs
1ms
23 57
IT02647
=100µs
IT02649
1.0 7 5
3
Switching Time, SW Time -- µs
2
0.1
0.1
5 3
2
10
7
-- A C
5 3
2
1.0 7 5
Collector Current, I
3 2
0.1
10
23 57 23 57
L=500µH IB2= --1A Tc=25°C Single pulse
23 57
Collector-to-Emitter Voltage, VCE -- V
70 65 60
t
f
1.0
Base Current, IB2 -- A
Reverse Bias A S O
23
100
P
-- Tc
C
1000
IT02648
2357
IT02650
2.5
-- W C
2.0
1.5
1.0
Collector Dissipation, P
0.5
0020 40 60 80 100 120 140 160
No heat sink
Ambient Temperature, Ta -- °C
IT02651
-- W
50
C
40
30
20
Collector Dissipation, P
10
0020 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT02652
No.6781-3/4
Page 4
2SD2650
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice.
PS
No.6781-4/4
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