Sanyo 2SD2650 Specifications

Ordering number : ENN6781A

2SD2650

NPN Triple Diffused Planar Silicon Transistor

2SD2650

Color TV Horizontal Deflection

Output Applications

Features

•

High speed.

• High breakdown voltage(V

• High reliability(Adoption of HVP process).

• Adoption of MBIT process.

CBO

=1500V).

Specifications

Package Dimensions

unit : mm

2174A

[2SD2650]

3.4

16.0

5.0

2.8

0.7

22.0

2.0

20.4

3.5

21.0

5.45

4.0

123

5.45

5.6

3.1

8.0

0.8

2.1

0.9

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-3PMLH

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg -55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C65W

1500 V

700 V

5V
8A

20 A

3.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Collector Cutoff Current I
Collector Sustain Voltage V
Emitter Cutoff Current I

CBO
CES

CEO

EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=800V, IE=0 10 µA
VCE=1500V , RBE=0 1.0 mA

(sus) IC=100mA, IB=0 700 V

VEB=4V, IC=0 1 mA

Unit

Continued on next page.

52101 TS IM TA-3147 / N3000 TS IM TA-3012

No.6781-1/4

2SD2650

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage VCE(sat) IC=4.5A, IB=0.9A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=4.5A, IB=0.9A 1.5 V

DC Current Gain
Fall Time t

hFE1VCE=5V, IC=1A 10
hFE2VCE=5V, IC=5A 5 8

IC=3A, IB1=0.6A, IB2=--1.2A 0.3 µs

f

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

Unit

INPUT

8

1.8A

7

2.0A

6

-- A
C

5

4

3

2

Collecotr Current, I

1

0

0

Collector-to-Emitter Voltage, VCE -- V

7

Ta=120

5

3
2

FE

10

7
5

DC Current Gain, h

3
2

1.0

0.1

°C

25°C

--40°C

23 57

R

R

100µF 470µF

I

C

B

+

-- V

CE

R

L

66.7Ω

+

VCC=200VVBE= --2V

V

50Ω

1.6A

1.4A

1.2A

1.0A

0.8A

0.6A

0.4A

0.2A

0.05A

I

=0

3214108769

h

FE

5

-- I

C

B

IT02643

VCE=5V

Collector Current, IC -- A

1.0 10

23 57

IT02645

9

8

7

-- A

6

C

5

4

3

Collector Current, I

2

1

0

0

5

3
2

1.0

(sat) -- V

7

CE

5

3
2

0.1

Ta= --40

7

Collector-to-Emitter

Saturation V oltage, V

5

120°C

3

0.1

I

-- V

C

BE

VCE=5V

25°C

--40°C

Ta=120°C

0.2 0.4 0.6 0.8 1.0 1.2 1.4

Base-to-Emitter V oltage, VBE -- V

VCE(sat) -- I

C

IT02644

IC / IB=5

25°C

°C

23 57

Collector Current, IC -- A

1.0 10

23 57

IT02646

No.6781-2/4