SANYO 2SD2645 Datasheet

Ordering number : ENN6897A

2SD2645

NPN Triple Diffused Planar Silicon Transistor

2SD2645

Color TV Horizontal Deflection

Output Applications

Features

•

High speed.

• High breakdown voltage(V

• High reliability(Adoption of HVP process).

• Adoption of MBIT process.

• On-chip damper diode.

CBO

=1500V).

Specifications

Absolute Maximum Ratings at T a=25°C

Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

Parameter Symbol Conditions Ratings Unit

CBO
CEO
EBO

C

CP

C

Tc=25°C80W

Package Dimensions

unit : mm

2174A

[2SD2645]

3.4

16.0

5.0

2.8

0.7

22.0

2.0

20.4

3.5

21.0

5.45

4.0

123

5.45

5.6

3.1

8.0

0.8

2.1

0.9

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-3PMLH

1500 V

800 V

5V
10 A
25 A

3.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

I

Collector Cutoff Current
Collector Sustain Voltage V

Emitter Cutoff Current I
Collector-to-Emitter Saturation Voltage VCE(sat) IC=7.2A, IB=1.44A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=7.2A, IB=1.44A 1.5 V

DC Current Gain

CBO

I

CES

CEO

EBO

hFE1VCE=5V, IC=1A 15
hFE2VCE=5V, IC=8A 5 8

VCB=800V, IE=0 10 µA
VCE=1500V , RBE=0 1.0 mA

(sus) IC=100mA, IB=0 800 V

VEB=4V, IC=0 40 130 mA

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52101 TS IM TA-3147 / 13001 TS IM TA-3088

No.6897-1/4

Unit

Continued from preceding page.

Parameter Symbol Conditions

Diode Forward Voltage V
Fall Time t

Switching Time Test Circuit

2SD2645

Ratings

min typ max

IEC=8A 2 V

F

IC=5A, IB1=1A, IB2=--2A 0.3 µs

f

Unit

PW=20µs
D.C.≤1%

INPUT

50Ω

10

9

2.0A

8

7

-- A
C

6

5

4

3

Collector Current, I

2

1
0

01 3 5 7 9

I

B1

I

B2

R

B

V

R

++

470µF100µF

IC -- V

CE

1.8A

2468

RL=40.0Ω

VCC=200VVBE= --2V

1.6A

Collector-to-Emitter Voltage, VCE -- V

100

7
5

3

FE

DC Current Gain, h

Ta=120°C

2

10

7
5

3
2

1.0

0.1 1.0 10

°C

25

--40°C

23 57 23 57

hFE -- I

C

Collector Current, IC -- A

OUTPUT

12

IC -- VBE(ON)

1.4A

1.2A

10

1.0A

0.8A

0.6A

0.4A

0.2A

IB=0

10

IT02880

VCE=5V

IT02882 IT02883

-- A

8

C

6

4

Collector Current, I

2

0

10

IC / IB=5

7
5

3
2

(sat) -- V

1.0
7

CE

5
3

2

0.1
7
5

3

Collector-to-Emitter

Saturation V oltage, V

2

0.01

0.1

°C

25°C

Ta=120

0.20 0.4 0.6 0.8 1.0 1.2

--40°C

Base-to-Emitter V oltage, VBE -- V

120

Ta= --40

°C

VCE(sat) -- I

°C

C

25°C

23 57 23 57

Collector Current, IC -- A

1.0 10

VCE=5V

IT02881

No.6897-2/4