Sanyo 2SD2639 Specifications

Ordering number : ENN6960

2SB1683 / 2SD2639

2SB1683 : PNP Epitaxial Planar Silicon Transistor

2SD2639 : NPN Triple Diffused Planar Silicon Transistor

2SB1683 / 2SD2639

140V / 12A, AF 60W Output Applications

Features

• Wide ASO because of on-chip ballast resistance.

• Good dependence of f

on current and good HF

T

characteristic.

Specifications

( ) : 2SB1683

Package Dimensions

unit : mm

2010C

[2SB1683 / 2SD2639]

10.2

3.6

18.0

5.6

123

2.55

5.1

1.2

0.8

2.55

2.7

2.7

6.3

15.1

14.0

4.5

1.3

0.4

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-220

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --40 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C80W

(--)160 V
(--)140 V

(--)6 V
(--)12 A
(--)15 A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I

CBO
EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=(--)80V, IE=0 (--)0.1 mA
VEB=(--)4V, IC=0 (--)0.1 mA

Continued on next page.

62501 TS IM TA-3139, 3140

Unit

No.6960-1/4

2SB1683 / 2SD2639

Continued from preceding page.

Parameter Symbol Conditions

DC Current Gain
Gain-Bandwidth Product f

Output Capacitance Cob VCB=(--)10V, f=1MHz (300)210 pF
Base-to-Emitter Saturation Voltage V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)0.5A (1.1)0.6 2.5 V
Collector-to-Base Breakdown Voltage V

Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V

Turn-ON Time t
Fall Time t
Storage Time t

* : The 2SB1683 / 2SD2639 are classified by 1A hFE as follows :

Rank D E

h

60 to 120 100 to 200

FE

hFE1VCE=(--)5V, IC=(--)1A 60* 200*
hFE2VCE=(--)5V, IC=(--)6A 20

VCE=(--)5V, IC=(--)1A 15 MHz

T

VCE=(--)5V, IC=(--)1A 1.5 V

BE

(BR)CBOIC
(BR)CEO

(BR)EBOIE

on

f

stg

=(--)5mA, IE=0 (--)160 V
IC=(--)5mA, RBE=∞ (--)140 V
IC=(--)50mA, RBE=∞ (--)140 V

=(--)5mA, IC=0 (--)6 V
See specified test circuit.
See specified test circuit.
See specified test circuit.

Switching Time Test Circuit

I

B1

PW=20µs
D.C.≤1%

Input

--10

--8

--240mA

-- A
C

--6

--4

Collector Current, I

--2

51Ω

--200mA

--160mA

--120mA

I

B2

R

V

R

200Ω

VBE=--2V
(For PNP, the polarity is reversed)

IC -- V

B

1Ω

++

1µF1µF

10IB1= --10IB2=IC=1A

CE

2SB1683

--80mA

--40mA

--20mA

R
20Ω

L

Output

VCC=20V

10

240mA

8

-- A
C

6

4

Collector Current, I

2

200mA

160mA

120mA

80mA

Ratings

min typ max

(0.25)0.26
(0.53)0.68
(1.61)6.88

IC -- V

CE

40mA

2SD2639

20mA

Unit

µs
µs
µs

0

0

--10 --20 --30 --40

Collector-to-Emitter Voltage, VCE -- V

IC -- V

--7

--6

--5

-- A
C

--4

--3

--2

Collector Current, I

--1

0

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

BE

Base-to-Emitter V oltage, VBE -- V

IB=0

IT03152

2SB1683
VCE= --5V

IT03154 IT03155

0

0

Collector-to-Emitter Voltage, VCE -- V

7

6

5

-- A
C

4

3

2

Collector Current, I

1

0

10 20 30 40

IC -- V

BE

Base-to-Emitter V oltage, VBE -- V

IT03153

2SD2639
VCE=5V

No.6960-2/4

-- MHz
T

10

2SB1683 / 2SD2639

fT -- I

5

3

2

7
5

C

2SB1683
VCE= --5V

-- MHz
T

10

5

3

2

7
5

fT -- I

C

2SD2639
VCE=5V

3

2

Gain-Bandwidth Product, f

1.0

1000

7
5

3

FE

2

100

7
5

DC Current Gain, h

3
2

10

--0.1 --1.0 --10

23 57

--1.0--0.1

Collector Current, I

hFE -- I

23 57 23 57 2

23 57

-- A

C

C

Collector Current, IC -- A

1000

2

7
5

Cob -- V

CB

IT03156

2SB1683
VCE= --5V

IT03158

2SB1683
f=1MHz

--10

3

2

Gain-Bandwidth Product, f

1.0
23 57

Collector Current, I

1000

7
5

3

FE

2

100

7
5

DC Current Gain, h

3
2

10

1000

23 57 23 57 2

0.1 1.0

2

7
5

Collector Current, IC -- A

1.00.1

hFE -- I

Cob -- V

23 57

-- A

C

C

CB

10

IT03157

2SD2639
VCE=5V

10

IT03159

2SD2639
f=1MHz

3
2

100

7
5

Output Capacitance, Cob -- pF

3
2

3
2

10

7
5

(sat) -- V

3

CE

2

1.0
7
5
3

2

Collector-to-Emitter

Saturation V oltage, V

0.1
7
5

23 57 23 57

Collector-to-Base Voltage, V

--10--1.0 --100

CB

VCE(sat) -- I

C

-- V

IT03160

2SB1683
IC / IB=10

23 57

Collector Current, IC -- A

--1.0--0.1

23 57

IT03162

--10

3
2

100

7
5

Output Capacitance, Cob -- pF

3
2

3
2

10

7
5

(sat) -- V

3

CE

2

1.0
7
5
3

2

Collector-to-Emitter

Saturation V oltage, V

0.1
7
5

23 57 23 57

Collector-to-Base Voltage, V

101.0 100

VCE(sat) -- I

C

CB

-- V

IT03161

2SD2639
IC / IB=10

23 57

Collector Current, IC -- A

1.00.1

23 57

IT03163

10

No.6960-3/4

2SB1683 / 2SD2639

5

3
2

VBE(sat) -- I

C

2SD1683
IC / IB=10

5

3
2

VBE(sat) -- I

C

2SD2639
IC / IB=10

(sat) -- V

--10

BE

7
5

3
2

Base-to-Emitter

Saturation V oltage, V

--1.0
7

5

3
2

ICP=15A

10

IC=12A

7
5

-- A
C

3
2

1.0
7
5

Collector Current, I

3

Tc=25°C

2

Single pulse
For PNP, minus sign is omitted

0.1

23 57

--1.0--0.1

23 57

Collector Current, IC -- A

Forward Bias A S O

2SB1683 / 2SD2639

1ms

10ms

100ms

DC operation

23 57

Collector-to-Emitter Voltage, VCE -- V

101.0

100

IT03164

2323 57

IT03166

--10

(sat) -- V

10

BE

7
5

3
2

Base-to-Emitter

Saturation V oltage, V

1.0
7

5

120

100

-- W
C

80

60

40

Collector Dissipation, P

20

0

23 57

0

20 40 60 80 100 120 140 160

1.00.1

23 57

Collector Current, IC -- A

P

C --

Tc

2SB1683 / 2SD2639

Case Temperature, Tc -- °C

10

IT03165

IT03168

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.

No.6960-4/4

PS