SANYO 2SD2635 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Darlington Transistor

Ordering number:ENN6449

2SD2635

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

120V / 2A Driver Applications

Applications

· Motor drivers, hammer drivers, and relay drivers.

Features

· Darlington connection

· High DC current gain.

· DC current gain is less affected by temperature.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVniatsuSesaB-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)eslup(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC

OEC

OBE

C

PC

C

Package Dimensions

unit:mm

2064A

[2SD2635]

6.9

4.5

1.01.0

0.6

0.9

123

2.54

)sus( 021V

0.5

2.54

1.45

2.5

1.0

1.0

4.0

0.45

1 : Emitter
2 : Collector
3 : Base
SANYO : NMP

021V
021V

6V
2A
3A
1W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

hEF1VECI,V3=

niaGtnerruCCD

hEF2VECI,V3=
hEF3VECI,V3=

V

OBC

V

OBE

I,V001=

BC
BE

0=01Aµ

E

I,V5=

0=5.2Am

C

A5.0=0001

C

A1=000200003

C

A1.0=003

C

92500TS (KOTO) TA-2846 No.6449–1/3

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Continued on next page.

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Continued from preceding page.

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Electrical Connection

C

B

R2R1

2SD2635

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egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVniatsuSrettimE-ot-rotcelloCV

EC
EB

OEC

)tas(ICI,A1=
)tas(ICI,A1=

I

OBC)RB(

C

I

OEC)RB(

C

)sus(I

C

Am2=5.1V

B

Am2=0.2V

B

I,Aµ001=

0=021V

E

R,Am01=

=∞ 021V

EB

depmalC,Hm01=L,A1=021V

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R1≈5kΩ
R2≈500Ω

2.0

1.6

–A

C

1.2

0.8

Collector Current, I

0.4

0

0

Collector-to-Emitter Voltage, VCE –V

10000

7
5

3
2

FE

1000

7
5

3

DC Current Gain, h

2

100

7
5

23 57 23 23577

E

I

-- V

C

1234

hFE -- I

CE

C

350

25

°C

µA

300

250

200

150

100

400

µA

µA

µA

µA

I

B

IT02069

µA

µA

=0

°C

Ta=75

°C

--25

0.10.01 1.0

Collector Current, IC–A

IT02071

I

-- V

2.2

2.0

1.8

1.6

–A

1.4

C

1.2

1.0

0.8

0.6

Collector Current, I

0.4

0.2
0

5

–V

0.20 0.4 0.6 0.8 1.0 1.2 1.4 2.01.81.6

Base-to-Emitter Voltage, VBE –V

2

1.5

C

VCE(sat) -- I

BE

°C

Ta=75

C

°C

°C

25

--25

IC / IB=500

IT02070

(sat)

CE

1.0

°C

9
8
7

6

Collector–to–Emitter

Saturation Voltage, V

5

25

Ta= --

°C

25

75°C

0.1

23557723

Collector Current, IC–A

1.0

IT02072

No.6449–2/3