Sanyo 2SD2634 Specifications

Ordering number : ENN6474B

2SD2634

NPN Triple Diffused Planar Silicon Transistor

2SD2634

Color TV Horizontal Deflection

Output Applications

Features

•

High speed.

• High breakdown voltage(V

• High reliability(Adoption of HVP process).

• Adoption of MBIT process.

• On-chip damper diode.

CBO

=1500V).

Specifications

Package Dimensions

unit : mm

2174A

[2SD2634]

3.4

16.0

5.0

2.8

0.7

22.0

2.0

20.4

3.5

21.0

5.45

4.0

123

5.45

5.6

3.1

8.0

0.8

2.1

0.9

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-3PMLH

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I

Collector Dissipation P
Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

C

Tc=25°C65W

1500 V

800 V

6V
8A

20 A

3.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Collector Cutoff Current I
Collector Sustain Voltage V
Emitter Cutoff Current I

CBO
CES

CEO

EBO

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max
VCB=800V, IE=0 10 µA
VCE=1500V , RBE=0 1.0 mA

(sus) IC=100mA, IB=0 800 V

VEB=4V, IC=0 40 130 mA

Continued on next page.

52101 TS IM TA-3147 / O2500 TS (KOTO) TA-2914

No.6474-1/4

Unit

2SD2634

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=4.5A, IB=0.9A 1.5 V

DC Current Gain
Diode Forward Voltage V

Fall Time t

VCE(sat) IC=4.5A, IB=0.9A 3 V

hFE1VCE=5V, IC=1A 10
hFE2VCE=5V, IC=5A 5 8

IEC=7A 2 V

F

IC=3A, IB1=0.6A, IB2=--1.2A 0.3 µs

f

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

Unit

INPUT

50Ω

8

R

V

B

R

+

100µF 470µF

IC -- V

+

VCC=200VVBE= --2V

CE

1.8A

7

2.0A

6

-- A
C

5

4

3

2

Collector Current, I

1

0

013579

2468

1.6A

1.4A

1.2A

Collector-to-Emitter Voltage, VCE -- V

5

3

2

Ta=120°C

FE

10

7
5

3

DC Current Gain, h

2

1.0

0.1 1.0 10

°C

25

-40°C

23 57 23 57

hFE -- I

C

VCE=5V

Collector Current, IC -- A

R

L

66.7Ω

1.0A

0.8A

0.6A

0.4A

0.2A

0.05A

I

IT01800

IT01802

IC -- V

9

8

7

-- A

6

C

5

4

3

Collector Current, I

2

=0

B

10

1
0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Base-to-Emitter V oltage, VBE -- V

5
3

2

1.0

(sat) -- V

7

CE

5

3
2

0.1
7

Collector-to-Emitter

Saturation V oltage, V

5
3

0.1

25

°C

23 57 23 57

VCE(sat) -- I

120°C

Collector Current, I

BE

VCE=5V

°C

°C

25

Ta=120

-40°C

C

IC / IB=5

°C

--40

Ta=

°C

--40

Ta=

1.0 10

C --

A

IT01801

120

°C

25

IT01803

°C

No.6474-2/4