SANYO 2SD2627 Datasheet
Ordering number : ENN6478
2SD2627
NPN Triple Diffused Planar Silicon Transistor
2SD2627
Color TV Horizontal Deflection
Output Applications
Features
•
High speed.
• High breakdown voltage(V
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.
CBO
=1500V).
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 ° C
Storage T emperature T stg -55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C30W
Package Dimensions
unit : mm
2079C
[2SD2627]
4.5
7.2
16.0
14.0
3.2
16.1
3.6
10.0
123
0.9
1.2
0.75
3.5
2.4
2.552.55
2.8
0.6
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI-LS
1500 V
800 V
6V
6A
15 A
2.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Collector Cutoff Current I
Collector Sustain Voltage V
Emitter Cutoff Current I
CBO
CES
CEO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCE=800V, IE=0 10 µA
VCE=1500V, RBE=0 1.0 mA
(sus) IC=100mA, IB=0 800 V
VEB=4V, IC=0 40 130 mA
Unit
Continued on next page.
91400 TS IM TA-2853
No.6478-1/4
2SD2627
Continued from preceding page.
Parameter Symbol Conditions
Collector-to-Emitter Saturation Voltage VCE(sat) IC=3.15A, IB=0.63A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=3.15A, IB=0.63A 1.5 V
DC Current Gain
Diode Forward Voltage V
Fall Time t
hFE1VCE=5V, IC=0.5A 10
hFE2VCE=5V, IC=3.5A 5 8
IEC=6A 2 V
F
IC=2A, IB1=0.4A, IB2=--0.8A 0.3 µs
f
min typ max
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
INPUT
50Ω
B1
I
B2
R
B
V
R
++
470µF100µF
VCC=200VVBE= --2V
OUTPUT
RL=100Ω
Ratings
Unit
IC -- V
1.6A
CE
1.4A
1.2A
-- A
C
6
5
2.0A
4
3
2
1.8A
Collector Current, I
1
0
013579
2468
Collector-to-Emitter Voltage, VCE -- V
5
3
2
FE
10
7
5
3
DC Current Gain, h
2
1.0
0.1 1.0 10
°C
Ta=120
°C
25
-40°C
23 57 23 57
hFE -- I
C
VCE=5V
Collector Current, IC -- A
1.0A
0.8A
0.6A
0.4A
0.2A
0.05A
=0
I
B
IT01810
IT01812
IC -- V
7
BE
VCE=5V
6
5
-- A
C
4
3
2
Collector Current, I
1
0
10
0.20 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter V oltage, VBE -- V
Ta=
--40
VCE(sat) -- I
°C
5
3
2
1.0
(sat) -- V
7
CE
5
3
2
0.1
Collector-to-Emitter
Saturation V oltage, V
7
5
3
0.1
25
°C
120°C
2 3 57 23 57
Collector Current, IC -- A
°C
°C
25
Ta=120°C
40
C
IC / IB=5
1.0 10
IT01811
IT01813
No.6478-2/4
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