SANYO 2SD2580 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
Ordering number:5796
2SD2580
16.0
2.0
2.8
1.0
4.0
21.0
5.0
8.0
22.0
20.4
5.6
3.1
2.0
2.0
0.6
5.45
5.45
12
3
3.5
3.4
Features
· High speed.
· High breakdown voltage (V
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
· On-chip damper diode.
CBO
=1500V).
Package Dimensions
unit:mm
2039D
[2SD2580]
1:Base
2:Collector
3:Emitter
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)eslup(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrotcelloCI
egatloVniatsuSrotcelloCV
tnerruCffotuCrettimEI
C
SANYO:TO3PML
sgnitaR
0051V
008V
6V
01A
03A
0.3W
07W
˚C
˚C
tinU
OBC
OEC
OBE
PC
C
Tc=25˚C
nimpytxam
V
OBC
V
SEC
I
)sus(OEC
C
V
OBE
I,V008=
BC
EC
BE
0=01Aµ
E
R,V0051=
0=0.1Am
EB
I,Am001=
0=008V
B
I,V4=
0=04031Am
C
Continued on next page.
O3098TS (KOTO) TA-1137 No.5796-1/4
Continued from preceiding page.
2SD2580
retemaraPlobmySsnotidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
niaGtnerruCCD
emiTllaFt
hEF1VECI,V5=
hEF2VECI,V5=
I
I,A8=
)tas(EC
C
I
)tas(EB
C
I
f
C
A6.1=5V
B
I,A8=
A6.1=5.1V
B
A1=5103
C
A8=58
C
I,A6=
I,A2.1=
1B
A4.2–=3.0sµ
2B
Switching Time Test Circuit
PW=20µs
DC
≤
1%
INPUT
Ω
50
I
B1
I
B2
R
V
R
VBE=–2V
OUTPUT
B
+
100µF
470µF
RL=33.3
+
VCC=200V
Ω
sgnitaR
nimpytxam
tinU
IC-
V
10
1.4A
9
8
7
–A
C
6
5
4
3
Collector Current, I
2
1
0
012345678910
1.6A
1.8A
2.0A
CE
Collector-to-Emitter Voltage, VCE –V
25˚C
-
hFE-
40˚C
5
3
2
Ta=120˚C
FE
10
7
5
3
DC Current Gain, h
2
1.0
7
7
22357 2357
0.1 1.0 10
I
C
VCE=5V
Collector Current, IC–A
1.0A
0.8A
0.4A
0.2A
I
B
1.2A
0.6A
=0
IC-
V
Ta=120˚C
BE
25˚C
40˚C
-
11
VCE=5V
10
9
8
–A
7
C
6
5
4
3
Collector Current, I
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE –V
V
7
I
/
IB=5
C
5
3
–V
2
1.0
CE (sat)
7
5
3
2
25
˚C
0.1
120˚C
7
Collector–to–Emitter
Saturation Voltage, V
5
3
72 2357 2357
0.1 1.0 10
CE(sat
-
=
40˚C
Ta
-
I
)
C
Collector Current, IC–A
No.5796-2/4
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