Sanyo 2SD2280 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
50V/7A High-Current Switching Applications
Ordering number:EN3713
2SB1507/2SD2280
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage :
V
· Wide ASO and highly registant to breakdown.
· Micaless package facilitating easy mounting.
( ) : 2SB1507
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* : The 2SB1507/2SD2280 are classified by 1A hFE as follows :
=(–)0.4V max.
CE(sat)
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
OBC
OEC
OBE
C
PC
C
OBC
OBE
hEF1VECI,V2)–(=
hEF2VECI,V2)–(=
T
)tas(EC
Tc=25˚C
V
BC
V
BE
V
EC
I
C
Package Dimensions
unit:mm
2039A
[2SB1507/2SD2280]
E : Emitter
C : Collector
B : Base
SANYO : TO-3PML
sgnitaR
nimpytxam
I,V04)–(=
0=1.0)–(Am
E
I,V4)–(=
0=1.0)–(Am
C
A1)–(=
C
A5)–(=
C
I,V5)–(=
A1)–(=
C
I,A4)–(=
A4.0)–(=
B
041Q07002R001082S041
*07*082
03
01zHM
06)–(V
05)–(V
6)–(V
7)–(A
02)–(A
0.3W
04W
˚C
˚C
tinU
4.0)–(V
N1098HA (KT)/5111MH, JK (KOTO) No.3713–1/4
2SB1507/2SD2280
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I,Am1)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Am1)–(=
0=6)–(V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time Test Circuit
sgnitaR
nimpytxam
2.0sµ
)7.0(sµ
9.0sµ
)1.0(sµ
3.0sµ
tinU
No.3713–2/4
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