SANYO 2SD2261 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Transistor

Driver Applications

Ordering number:ENN5311A

2SD2261

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Applications

· Motor drivers, printer hammer drivers, relay drivers.

Features

· Darlington connection.

· High DC current gain.

· DC current gain is less affected by temperature.

· Small-sized package.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2038A

[2SD2261]

4.5

1.6

2.5

0.4

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

C

mm052(draobcimarecanodetnuoM

0.5

2

3

1.5

0.75

2

× )mm8.05.1W

1

3.0

4.25max

1.0

1.5

0.4

1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)

08V
06V
6V

5.2A
5A

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

h

V

OBC

V

OBE

V

EF

I

)tas(EC

C

I

)tas(EB

C

I

OBC)RB(

C

I

OEC)RB(

C

I,V06=

BC
BE
EC

0=01Aµ

E

I,V5=

0=5.2Am

C

I,V2=

A1=

C

I,A1=

Am2=

B

I,A1=

Am2=2V

B

I,Aµ001=

0=08V

E

R,Am01=

=∞ 06V

EB

Marking : DR

O1899TS (KOTO) X-7044 No.5311–1/3

sgnitaR

nimpytxam

000200003

tinU

5.1V

Electrical Connection

B

7kΩ

2.0

1.8

1.6

–A

1.4

C

1.2

1.0

0.8

0.6

Collector Current, I

0.4

0.2
0

013579

10000

7
5

FE

3

2

1000

7

DC Current Gain, h

5

3
2

3

–V

2

BE(sat)

1.0

7

5

3

2

5

Base-to-Emitter Saturation Voltage, V

µA

400

300µA

24

Collector-to-Emitter Voltage, VCE–V

5

0.1

Collector Current, IC–A

V

Ta=--25°C

25°C

23 77

0.1

Collector Current, IC–A

500Ω

I

C

250µA

h

Ta=75°C

233577

BE

FE

C

E

-- V

CE

200µA

6

-- I

C

°C

--25

(sat) -- I

°C

75

5

140µA

1.0

C

1.0

180µA

160µA

120µA

I

8

VCE=2V

25°C

23 5

IC / IB=500

23 5

2SD2261

=0

B

10

IT00003

IT00005

IT00007

2.5

VCE=2V

2.0

–A

C

1.5

1.0

Collector Current, I

0.5

000.2 0.4 0.6 0.8

3

2

–V

1.0

CE(sat)

7

5

3

Collector-to-Emitter

Saturation Voltage, V

2

5

77

0.1

10

I

7

CP

5

I

C

3
2

–A

1.0

C

7
5

3
2

0.1
7

Collector Current, I

5

Ta=25

°C

3

Single pulse

2

Mounted on a ceramic board (250mm

0.01
5

Collector-to-Emitter Voltage, VCE–V

I

-- V

C

BE

°C

25°C

--25°C

Ta=75

Base-to-Emitter Voltage, VBE–V

V

1.0 1.2 1.4 1.6 1.8 2.0

(sat) -- I

CE

C

IT00004

IC / IB=500

Ta=--25°C

75°C

25°C

23 5

Collector Current, IC–A

1.0

352

IT00006

A S O

1ms

10ms

DC operation

2

×0.8mm)

2233377755

1.0

10

IT00008

100

No.5311–2/3