Sanyo 2SD2202 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

PNP/NPN Epitaxial Planar Silicon Transistors

High-Current Switching Applications

Ordering number:EN3249

2SB1454/2SD2202

Features

· Low collector-to-emitter saturation voltage.

· Large current capacity.

· Micaless package facilitating easy mounting.

( ) : 2SB1454

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

egatloVnoitarutaSrettimE-ot-rotcelloCV

* : The 2SB1454/2SD2202 are classified by 1A hFE as follows :

OBC
OEC
OBE

C

PC

C

OBC
OBE

hEF1VECI,V2)–(=
hEF2VECI,V2)–(=

T

)tas(EC

Tc=25˚C

V

BC

V

BE

V

EC

I

C

Package Dimensions

unit:mm

2041A

[2SB1454/2SD2202]

1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML

sgnitaR

nimpytxam

I,V08)–(=

0=1.0)–(Am

E

I,V4)–(=

0=1.0)–(Am

C

A1)–(=

C

A3)–(=

C

I,V5)–(=

A1)–(=

C

I,A3)–(=

A3.0)–(=

B

041Q07002R001082S041

*07*082

03

02zHM

09)–(V

08)–(V

6)–(V

5)–(A

9)–(A

0.2W
52W

˚C
˚C

tinU

4.0V
)5.0–(V

N1098HA (KT)/N149MO, TS No.3249–1/4

2SB1454/2SD2202

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

emiTNO-nruTt

emiTegarotSt

emiTllaFt

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

no

gts

f

I,Am1)–(=

0=09)–(V

E

R,Am1)–(=

=∞ 08)–(V

EB

I,Am1)–(=

0=6)–(V

C

.tiucrictsetdeificepseeS

.tiucrictsetdeificepseeS

.tiucrictsetdeificepseeS

Switching Time Test Circuit

sgnitaR

nimpytxam

)2.0(sµ

1.0sµ
)7.0(sµ

2.1sµ
)2.0(sµ

4.0sµ

tinU

No.3249–2/4