Sanyo 2SD2199 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
PNP/NPN Epitaxial Planar Silicon Transistors
50V/7A Switching Applications
Ordering number:EN3150
2SB1450/2SD2199
Features
· Surface mount type device making the following possible.
-Reduction in the number of manufacturing pro-
cesses for 2SB1450/2SD2199-applied equipment.
-High density surface mount applications.
-Small size of 2SB1450/2SD2199-applied equip-
ment.
· Low collector-to-emitter saturation voltage.
· Highly resistant to breakdown because of wide ASO.
( ) : 2SB1450
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
* : The 2SB1450/2SD2199 are classified by 1A hFE as follows :
041Q07002R001082S041
OBC OEC OBE
C
PC
C
Tc=25˚C
V
OBC
V
OBE
hEF1VECI,V2)–(= hEF2VECI,V2)–(=
V
T
I
)tas(EC
C
Package Dimensions
unit:mm
2069B
[2SB1450/2SD2199]
1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD
06)–(V
05)–(V
6)–(V
7)–(A
21)–(A
56.1W 04W
˚C ˚C
sgnitaR
nimpytxam
I,V04)–(=
BC BE
EC
0=1.0)–(Am
E
I,V4)–(=
0=1.0)–(Am
C
A1)–(=
C
A5)–(=
C
I,V5)–(=
A1)–(=
C
I,A4)–(=
A4.0)–(=
B
*07*082
03
01zHM
tinU
4.0)–(V
O1598HA (KT)/7039MO, TS No.3150–1/4
2SB1450/2SD2199
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E no gts
f
I,Am1)–(=
0=06)–(V
E
R,Am1)–(=
= 05)–(V
EB
I,Am1)–(=
0=6)–(V
C
.tiucrictsetdeificepseeS .tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time Test Circuit
sgnitaR
nimpytxam
2.0sµ )1.0(sµ
3.0sµ )7.0(sµ
9.0sµ
tinU
No.3150–2/4
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