Sanyo 2SD2198 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
50V/5A Switching Applications
Ordering number:EN3149
2SB1449/2SD2198
Features
· Surface mount type device making the following
possible.
-Reduction in the number of manufacturing pro-
cesses for 2SB1449/2SD2198-applied equipment.
-High density surface mount applications.
-Small size of 2SB1449/2SD2198-applied equip-
ment.
· Low collector-to-emitter saturation voltage.
( ) : 2SB1449
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SB1449/2SD2198 are classified by 1A hFE as follows :
OBC
OEC
OBE
C
PC
C
OBC
OBE
hEF1VECI,V2)–(=
hEF2VECI,V2)–(=
T
bo
Tc=25˚C
V
BC
V
BE
V
EC
V
BC
Package Dimensions
unit:mm
2069B
[2SB1449/2SD2198]
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
sgnitaR
nimpytxam
I,V04)–(=
0=1.0)–(Am
E
I,V4)–(=
0=1.0)–(Am
C
A1)–(=
C
A3)–(=
C
I,V5)–(=
A1)–(=
C
zHM1=f,V01)–(=
041Q07002R001082S041
*07*082
03
03zHM
001Fp
)061(Fp
06)–(V
05)–(V
6)–(V
5)–(A
9)–(A
56.1W
03W
˚C
˚C
tinU
O1598HA (KT)/7039MO, TS No.3149–1/4
2SB1449/2SD2198
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
no
gts
f
I,A3)–(=
C
C
C
E
A3.0)–(=
B
I,Am1)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Am1)–(=
0=6)–(V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time Test Circuit
sgnitaR
nimpytxam
1.0sµ
)7.0(sµ
4.1sµ
2.0sµ
tinU
4.0)–(V
No.3149–2/4
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