SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
General Driver Applications
Ordering number:EN3204
2SD2117
Features
· Darlington connection.
· High DC current gain.
· Large current capacity, wide ASO.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
C
PC
C
hEF1VECI,V2=
hEF2VECI,V2=
T
Package Dimensions
unit:mm
2064A
[2SD2117]
6.9
1.01.0
0.6
0.9
123
2.54
OBC
OEC
OBE
V
OBC
V
OBE
V
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V04=
BC
BE
EC
0=001An
E
I,V6=
0=001An
C
Am005=
C
Am01=
C
I,V01=
Am05=
C
I,Am005=
Am5.0=
B
I,Am005=
Am5.0=5.10.2V
B
I,Aµ01=
0=08V
E
∞ 05V
R,Am1=
=
EB
I,Aµ01=
0=01V
C
1.45
0.5
2.54
nimpytxam
0004
0003
1.0
1.0
4.0
0.45
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
08V
05V
01V
5.1A
3A
1W
˚C
˚C
sgnitaR
021zHM
9.05.1V
tinU
31099TH (KT)/O269MO, TS No.3204–1/3