Sanyo 2SD2116 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
General Driver Applications
Ordering number:EN3203
2SD2116
4.5
2.5
Features
· Darlington connection.
· High DC current gain.
· Large current capacity, wide ASO.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2064A
[2SD2116]
6.9
1.01.0
0.6
0.9
123
2.54
OBC
OEC
OBE
1.45
0.5
1.0
1.0
4.0
0.45
1 : Emitter
2 : Collector
3 : Base
2.54
SANYO : NMP
08V
05V
01V
7.0A
2A
1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
hEF1VECI,V2=
hEF2VECI,V2=
V
OBC
V
OBE
V
T
V
bo
I,V04=
BC
BE
EC
BC
0=001An
E
I,V8=
0=001An
C
Am05=
C
Am005=
C
I,V5=
Am05=
C
zHM1=f,V01=
31099TH (KT)/O269MO, TS No.3203–1/3
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0005
0004
002zHM
9Fp
Continued on next page.
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Continued on next page.
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Electrical Connection
2SD2116
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egatloVnwodkaerBesaB-ot-rettimEV
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Am001=
Am1.0=
B
I,Am001=
Am1.0=4.10.2V
B
I,Aµ01=
0=08V
E
R,Am1=
=∞ 05V
EB
I,Aµ01=
0=01V
C
sgnitaR
nimpytxam
8.02.1V
tinU
No.3203–2/3
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