Sanyo 2SD2100 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Compact Motor Driver Applications
Ordering number:EN3176A
2SB1397/2SD2100
Features
· Low saturation voltage.
· Contains diode between collector and emitter.
· Contains bias resistance between base and emitter.
· Large current capacity.
· Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.
( ) : 2SB1397
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
Marking : 2SB1397 : BP
2SD2100 : DP
OBC
OEC
OBE
C
PC
Mounted on ceramic board (250mm2×0.8mm)
C
V
OBC
hEF1VECI,V2)–(=
hEF2VECI,V2)–(=
V
T
V
bo
Package Dimensions
unit:mm
2038
[2SB1397/2SD2100]
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
52)–(V
02)–(V
6)–(V
2)–(A
4)–(A
3.1W
˚C
˚C
sgnitaR
nimpytxam
I,V02)–(=
BC
EC
BC
0=0.1)–(Aµ
E
A5.0)–(=
C
A2)–(=
C
I,V2)–(=
A5.0)–(=
C
zHM1=f,V01)–(=
07)–(
05)–(
)003(zHM
002zHM
52)04(Fp
tinU
O1598HA (KT)/12894TH/7149MO, TS No.3176–1/5
2SB1397/2SD2100
retemaraPlobmySsnoitidnoC
egatloVdawroFedoiDV
ecnatsiseRrettimE-ot-esaBR
Electrical Connection
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloC
V
V
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
1OEC)RB(
C
I
2OEC)RB(
C
IFA5.0=
F
EB
I,A1)–(=
B
I,A1)–(=
B
Am05)–(=
Am05)–(=5.1)–(V
I,Aµ01)–(=
0=52)–(V
E
R,Aµ01)–(=
=∞ 52)–(V
EB
R,Am01)–(=
=∞ 02)–(V
EB
sgnitaR
nimpytxam
52.0)–(5.0)–(V
6.1
tinU
kΩ
5.1)–(V
No.3176–2/5
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