Sanyo 2SD2028 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Low-Frequency Power Amplifier Applications
Ordering number:EN2803
2SD2028
0.4
Features
· With Zener diode (11±3V) between collector and
base.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Ultrasmall-sized package permitting the 2SD2028applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2018B
[2SD2028]
3
1
0.95
0.95
1.9
2.9
)V3±11(edoidreneZhtiW 8V
)V3±11(edoidreneZhtiW 8V
0.5
1.5
2
0.5
0.8
0.16
2.5
0 to 0.1
1 : Base
1.1
2 : Emitter
3 : Collector
SANYO : CP
5V
7.0A
5.1A
002Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
hEF1VECI,V2=
hEF2VECI,V2=
* : The 2SD2028 is classified by 50mA hFE as follows :
(Note) Marking : LT
V
OBC
V
OBE
V
T
V
bo
I,V6=
BC
BE
EC
BC
0=001An
E
I,V4=
0=001An
C
C
C
I,V2=
C
zHM1=f,V5=
004600200670030098054
Am05=
Am005=
Am05=
hFE rank : 6, 7, 8
31099TH (KT)/D148MO, TS No.2803–1/3
sgnitaR
nimpytxam
*002*009
001
002zHM
21Fp
Continued on next page.
tinU
Continued from preceding page.
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Electrical Connection
2SD2028
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Am001=
Am01=
B
I,Am001=
Am01=8.02.1V
B
I,Aµ001=
0=81141V
E
R,Aµ001=
=∞ 81141V
EB
I,Aµ01=
0=5V
C
sgnitaR
nimpytxam
05021Vm
tinU
No.2803–2/3
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