Sanyo 2SD1998 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
PNP/NPN Epitaxial Planar Silicon Transistors
Compact Motor Driver Applications
Ordering number:EN3130
2SB1324/2SD1998
Features
· Low saturation voltage.
· Contains diode between collector and emitter.
· Contains bias resistance between collector and emitter.
· Large current capacity.
· Small-sized package making it easy to provide high­density, small-sized hybrid ICs.
( ) : 2SB1324
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
Marking : 2SB1324 : BL
2SD1998 : DM
OBC OEC OBE
C
PC
Mounted on ceramic board (250mm2×0.8mm)
C
V
OBC
hEF1VECI,V2)–(= hEF2VECI,V2)–(=
V
T
V
bo
I
)tas(EC
Package Dimensions
unit:mm
2038
[2SB1324/2SD1998]
E : Emitter C : Collector B : Base SANYO : PCP (Bottom view)
04)–(V
03)–(V
6)–(V
3)–(A
5)–(A
5.1W
˚C ˚C
sgnitaR
nimpytxam
I,V03)–(=
BC
EC BC
C
0=0.1)–(Aµ
E
A5.0)–(=
C
A2)–(=
C
I,V2)–(=
A5.0)–(=
C
zHM1=f,V01)–(=
I,A2)–(=
B
Am001)–(=
07 05
001zHM
04)55(Fp
2.05.0V )52.0–()6.0–(V
tinU
O1598HA (KT)/6089MO, TS No.3130–1/4
2SB1324/2SD1998
retemaraPlobmySsnoitidnoC
egatloVdawroFedoiDV
ecnatsiseRrettimE-ot-esaBR
Electrical Connection
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloC
V V
V
)tas(EB
I
OBC)RB(
C
I
1OEC)RB(
C
I
2OEC)RB(
C
IFA5.0=
F
EB
I,V2)–(=
EC
B
I,Aµ01)–(=
E
R,Aµ01)–(=
R,Am01)–(=
Am001)–(=5.1)–(V
0=04)–(V
= 04)–(V
EB
= 03)–(V
EB
sgnitaR
nimpytxam
8.0
tinU
5.1V
k
No.3130–2/4
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