Sanyo 2SD1958 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
TV Horizontal Deflection Output
High-Current Switching Applications
Ordering number:EN2549A
2SD1958
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2.4
1
23
Features
· Excellent tf permitting efficient drive with less internal dissipation.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2041A
[2SD1958]
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
OBC OEC OBE
Tc=25˚C
002V 06V 6V
5.4A 01A 03W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
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tnerruCffotuCrotcelloC
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
I
hEF1VECI,V5= hEF2VECI,V5=
V
OBC OBE
T
BC
V
BE
V
EC
I
)tas(EC
C
I
)tas(EB
C
I,V04=
0=1.0Am
E
I,V5=
0=1.0Am
C
A1=
C
A4=
C
I,V5=
A1=
C
I,A4=
A4.0=
B
I,A4=
A4.0=5.1V
B
31099TH (KT)/6098MO/4227TA, TS No.2549–1/3
sgnitaR
nimpytxam
03061 52
01zHM
5.00.1V
Continued on next page.
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2SD1958
Continued from preceding page.
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emiTllaFt
Switching Time Test Circuit
I
I,Am5=
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
f
0=002V
E
R,Am5=
= 06V
EB
I,Am5=
0=6V
C
sgnitaR
nimpytxam
.tiucriCtseTdeificepseeS
2.05.0sµ
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No.2549–2/3
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