Sanyo 2SD1940 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
85V/6A, AF 25 to 30W
Output Applications
Ordering number:EN2533
2SD1940
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2.4
1
23
Features
· Micaless package facilitating mounting.
· Wide ASO.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2041A
[2SD1940]
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
PC
Tc=25˚C
C
001V 58V 6V 6A 01A 52W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVrettimE-ot-esaBV
ecnaticapaCtuptuOC
hEF1VECI,V5= hEF2VECI,V5=
* : The 2SD1940 is classified by 1A hFE as follows :
V
OBC
V
OBE
V
T
I
)tas(EC
C
V
EB
V
bo
I,V04=
BC BE
EC
EC BC
0=1.0Am
E
I,V4=
0=1.0Am
C
A1=
C
A3=
C
I,V5=
A1=
C
I,A4=
A4.0=
B
I,V5=
A1=5.1V
C
zHM1=f,V01=
021D06002E001023F061
sgnitaR
nimpytxam
*06*023
02
51zHM
011Fp
tinU
0.2V
Continued on next page.
31099TH (KT)/4227TA, TS No.2533–1/4
2SD1940
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTllaFt
emiTegarotSt
Switching Time Test Circuit
I
I,Am5=
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
f
gts
0=001V
E
R,Am5=
= 58V
EB
I,Am5=
0=6V
C
sgnitaR
nimpytxam
.tiucriCtseTdeificepseeS .tiucriCtseTdeificepseeS .tiucriCtseTdeificepseeS
82.0sµ
05.0sµ
06.3sµ
tinU
No.2533–2/4
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