SANYO 2SD1913 Datasheet
Ordering number : ENN2246B
2SB1274/2SD1913
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1274/2SD1913
60V/3A Low-Frequency
Power Amplifier Applications
Applications
•
General power amplifier.
Package Dimensions
unit : mm
2041A
Features
• Wide ASO (Adoption of MBIT process).
•
Low saturation voltage.
• High reliability.
• High breakdown voltage.
• Micaless package facilitating mounting.
Specifications
( ):2SB1274
3.2
18.1
2.55
5.6
2.55
[2SB1274/2SD1913]
10.0
3.5
1.6
1.2
0.75
1
23
2.55
2.55
4.5
2.8
7.2
16.0
2.4
0.7
14.0
1 : Base
2 : Collector
2.4
3 : Emitter
SANYO : TO-220ML
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg −55 to +150 °C
CBO
CEO
EBO
C
CP
C
Tc=25°C20W
(−)60 V
(−)60 V
(−)6 V
(−)3 A
(−)8 A
2W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
CBO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
VCB=(--)40V, IE=0 (--)100 µA
VEB=(--)4V, IC=0 (--)100 µA
Continued on next page.
D2000 TS IM 8-2055
Unit
No.2246-1/4
2SB1274/2SD1913
Continued from preceding page.
Parameter Symbol Conditions
DC Current Gain
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (60)40 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)2A, IB=(--)0.2A (--)0.4 (--)1 V
Base-to-Emitter Voltage V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
* : The 2SBB1274 / 2SD1913 are classified by 0.5A hFE as follows :
Rank QR S
hFE70 to 140 100 to 200 140 to 280
hFE1VCE=(--)5V, IC=(--)0.5A 70* 280*
hFE2VCE=(--)5V, IC=(--)3A 20
VCE=(--)5V, IC=(--)0.5A 100 MHz
T
BE
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
VCE=(--)5V, IC=(--)0.5A (--)0.8 (--)1 V
=(--)1mA, IE=0 (--)60 V
=5mA, RBE=∞ (--)60 V
=(--)1mA, IC=0 (--)6 V
min typ max
Ratings
Unit
--3.0
2SB1274
--2.5
-- A
--2.0
C
--1.5
--1.0
--40mA
--45mA
--50mA
IC -- V
--35mA
CE
--30mA
--25mA
--20mA
--15mA
--10mA
--5mA
Collector Current, I
--0.5
=0
I
0
0--2--1 -- 4--3 --5 --6
B
Collector-to-Emitter Voltage, VCE -- V
--3.6
2SB1274
VCE= --5V
--3.2
--2.8
-- A
--2.4
C
--2.0
--1.6
--1.2
Collector Current, I
--0.8
--0.4
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
IC -- V
Ta=120°C
BE
25°C
--40°C
Base-to-Emitter V oltage, VBE -- V
IT02816
IT02818
3.0
30mA
45mA
2.5
35mA
40mA
50mA
-- A
2.0
C
IC -- V
25mA
CE
20mA
2SD1913
15mA
10mA
1.5
BE
25°C
--40°C
5mA
I
B
=0
IT02817
2SD1913
VCE=5V
IT02819
1.0
0.5
0
0214356
Collector-to-Emitter Voltage, VCE -- V
3.6
3.2
2.8
-- A Collector Current, I
2.4
C
2.0
1.6
1.2
Collector Current, I
0.8
0.4
0
0 0.2 0.4 0.80.6 1.0 1.2 1.4
IC -- V
Ta=120°C
Base-to-Emitter V oltage, VBE -- V
No.2246-2/4
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