Sanyo 2SD1906 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Type Silicon Transistors
High-Current Switching Applications
Ordering number:EN2266A
2SB1270/2SD1906
Applications
· Suitable for relay drivers, high-speed inverters,
converters, and other general high-current switching
applications.
Features
· Suitable for sets whose height is restricted.
· Low collector to emitter saturation voltage.
· Large current capacity.
( ) : 2SB1270
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Tc=25˚C
Package Dimensions
unit:mm
2049B
[2SB1270/2SD1906]
E : Emitter
C : Collector
B : Base
SANY O : T O-220MF
09)–(V
08)–(V
6)–(V
5)–(A
9)–(A
56.1W
03W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
* : The 2SB1270/2SD1906 are classified by 1A hFE as follows :
hEF1VECI,V2)–(=
hEF2VECI,V2)–(=
V
OBC
OBE
T
BC
V
BE
V
EC
I
)tas(EC
C
I,V08)–(=
0=1.0)–(Am
E
I,V4)–(=
0=1.0)–(Am
C
A1)–(=
C
A3)–(=
C
I,V5)–(=
A1)–(=
C
I,A3)–(=
A3.0)–(=
B
041Q07002R001082S041
O1598HA (KT)/D251MH/4097TA, TS No.2266–1/4
nimpytxam
03
sgnitaR
*07*082
02zHM
tinU
4.0V
)5.0–(V
2SB1270/2SD1906
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I,Am1)–(=
0=09)–(V
E
R,Am1)–(=
=∞ 08)–(V
EB
I,Am1)–(=
0=6)–(V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time Test Circuit
sgnitaR
nimpytxam
)2.0(sµ
1.0sµ
)7.0(sµ
2.1sµ
)2.0(sµ
4.0sµ
tinU
No.2266–2/4
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