Sanyo 2SD1903 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
30V/8A High-Current Switching Applications
Ordering number:EN2263A
2SB1267/2SD1903
Applications
· Suitable for relay drivers, high-speed inverters,
converters and other general high-current switching.
Features
· Suitable for sets whose height is restricted.
· Low collector to emitter saturation voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
( ) : 2SB1267
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Tc=25˚C
Package Dimensions
unit:mm
2049B
[2SB1267/2SD1903]
E : Emitter
C : Collector
B : Base
SANY O : T O-220MF
06)–(V
03)–(V
6)–(V
8)–(A
51)–(A
56.1W
03W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
* : The 2SB1267/2SD1903 are classified by 1A hFE as follows :
hEF1VECI,V2)–(=
hEF2VECI,V2)–(=
V
OBC
OBE
T
BC
V
BE
V
EC
I
)tas(EC
C
I,V04)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
A1)–(=
C
A4)–(=
C
I,V5)–(=
A1)–(=
C
I,A3)–(=
B
A51.0)–(=
041Q07002R001082S041
O1598HA (KT)/D251MH/5137TA, TS No.2263–1/4
nimpytxam
03
sgnitaR
*07*082
021zHM
tinU
4.0V
)5.0–(V
2SB1267/2SD1903
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I,Am1)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 03)–(V
EB
I,Am1)–(=
0=6)–(V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time Test Circuit
sgnitaR
nimpytxam
1.0sµ
)2.0(sµ
5.0sµ
30.0sµ
tinU
No.2263–2/4
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