Sanyo 2SD1902 Specifications

Ordering number:EN2538A
PNP/NPN Triple Diffused Planar Type Silicon Transistors
2SB1266/2SD1902
AF Power Amplifier Applications
Features
· Suitable for sets whose heighit is restricted.
· Wide ASO (adoption of MBIT process).
· High reliability.
( ) : 2SB1266
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SB1266/2SD1902 are classified by 0.5A hFE as follows :
OBC OEC OBE
C
PC
C
Tc=25˚C
V
OBC
V
OBE
hEF1VECI,V5)–(= hEF2VECI,V5)–(=
V
T
V
bo
Package Dimensions
unit:mm
2049B
[2SB1266/2SD1902]
E : Emitter C : Collector B : Base SANYO : TO-220MF
06)–(V
06)–(V
6)–(V
3)–(A
8)–(A
56.1W 03W
˚C ˚C
sgnitaR
nimpytxam
I,V04)–(=
BC BE
EC BC
0=001)–(Aµ
E
I,V4)–(=
0=001)–(Aµ
C
A5.0)–(=
C
A3)–(=
C
I,V5)–(=
A5.0)–(=
C
zHM1=f,V01)–(=
041Q07002R001082S041
*07*082
02
04)8(zHM )06(Fp
011Fp
tinU
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/D251MH/4167TA, TS No.2538–1/4
2SB1266/2SD1902
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egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
)tas(EC
I
EB
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
I,A2)–(=
C
EC C C E
A2.0)–(=
B
I,V5)–(=
A5.0)–(=7.0)–(1)–(V
C
I,Am1)–(=
0=06)–(V
E
R,Am5)–(=
= 06)–(V
EB
I,Am1)–(=
0=6)–(V
C
sgnitaR
nimpytxam
4.0)–(1)–(V
tinU
No.2538–2/4
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