Sanyo 2SD1840 Specifications
Ordering number:EN3259
2SB1230 : PNP Epitaxial Planar Silicon Transistor
2SD1840 : NPN Triple Diffused Planar Silicon Transistor
2SB1230/2SD1840
100V/4A Switching Applications
Applications
· Motor drivers, relay drivers, converters and other
general high-current switching applications.
Features
· Large current capacity and wide ASO.
· Low saturation voltage.
( ) : 2SB1230
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
C
Tc=25˚C
Package Dimensions
unit:mm
2022A
[2SB1230/2SD1840]
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
011)–(V
001)–(V
6)–(V
51)–(A
52)–(A
5)–(A
0.3W
001W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
hEF2VECI,V2)–(=
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
V
OBC
V
OBE
1VECI,V2)–(=
EF
I
)tas(EC
I
)tas(EB
I,V001)–(=
BC
BE
C
C
0=1.0)–(Am
E
I,V5)–(=
0=1.0)–(Am
C
A5.1)–(=
C
A6)–(=
C
I,A6)–(=
A6.0)–(=8.0)–(V
B
I,A6)–(=
A6.0)–(=5.1)–(V
B
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/9140MH, JK (KOTO) No.3259–1/4
sgnitaR
*05*041
02
tinU
2SB1230/2SD1840
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egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Am1)–(=
0=011)–(V
E
R,Am5)–(=
=∞ 001)–(V
EB
I,Am1)–(=
0=6)–(V
C
* : For the hFE1 of the 2SB1230/2SD1840, specify two ranks or more in principle.
001P05041Q07
sgnitaR
nimpytxam
tinU
No.3259–2/4
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