Sanyo 2SD1835 Specifications
Ordering number:EN2158A
PNP/NPN Epitaxial Planar Silicon Transistor
2SB1229/2SD1835
Driver Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
· Adoption of FBET, MBIT processes.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching time.
( ) : 2SB1229
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2003A
[2SB1229/2SD1835]
JEDEC : TO-92 B : Base
EIAJ : SC-43 C : Collector
SANYO : NP E : Emitter
OBC
OEC
OBE
06)–(V
05)–(V
6)–(V
2)–(A
3)–(A
57.0W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
hEF1VECI,V2)–(=
hEF2VECI,V2)–(=
V
OBC
OBE
T
bo
BC
V
BE
V
EC
V
BC
I
)tas(EC
C
I,V05)–(=
0=001)–(An
E
I,V4)–(=
0=001)–(An
C
C
C
I,V01)–(=
C
I,A1)–(=
B
Am001)–(=*001*065
A5.1)–(=04
Am05)–(=051zHM
zHM1=f,V01)–(=)22(21Fp
Am05)–(=
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4107KI/0296AT, TS No.2158–1/5
sgnitaR
51.04.0V
)3.0–()7.0–(V
tinU
2SB1229/2SD1835
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egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emITNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EB
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
no
gts
f
I,A1)–(=
C
C
C
E
B
Am05)–(=9.0)–(2.1)–(V
I,Aµ01)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Aµ01)–(=
0=6)–(V
C
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
* : The 2SB1229/2SD1835 are classified by 100mA hFE as follows :
002R001082S041004T002065U082
Switching Time T est Circuit
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)06(06sn
055sn
)054(sn
03sn
03sn
tinU
No.2158–2/5
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