Sanyo 2SD1815 Specifications
Ordering number:EN2539B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1215/2SD1815
High-Current Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
· Low collector-to-emitter saturation voltage.
· Excllent linearity of hFE.
· Small-sized package permitting 2SB1215/2SD1815applied sets to be made small and slim.
· High fT.
· Fast switching time.
Package Dimensions
unit:mm
2045B
[2SB1215/2SD1815]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1215/2SD1815]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/40196TS (KOTO) 8-9913/8229MO/4097TA, TS No.2539–1/5
2SB1215/2SD1815
( ) : 2SB1215
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
* : The 2SB1215/2SD1815 are classified by 100mA hFE as follows :
OBC
OEC
OBE
C
PC
C
Tc=25˚C
V
OBC
OBE
EF
hEF2VECI,V5)–(=
T
bo
no
gts
f
BC
V
BE
1VECI,V5)–(=
V
EC
V
BC
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V001)–(=
0=1)–(Aµ
E
I,V4)–(=
0=1)–(Aµ
C
A5.0)–(=
C
A2)–(=
C
I,V01)–(=
A5.0)–(=
C
zHM1=f,V01)–(=52)04(Fp
I,A5.1)–(=
B
I,A5.1)–(=
B
I,Aµ01)–(=
R,Am1)–(=
I,Aµ01)–(=
A51.0)–(=
A51.0)–(=9.0)–(2.1)–(V
0=021)–(V
E
=∞ 001)–(V
EB
0=6)–(V
C
tiucriCtseTdeificepseeS001sn
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS05sn
sgnitaR
nimpytxam
*07*004
04
)031(zHM
081zHM
051004Vm
)002–()005–(Vm
)008(sn
009sn
021)–(V
001)–(V
6)–(V
3)–(A
6)–(A
1W
02W
˚C
˚C
tinU
Switching Time T est Circuit
041Q07002R001082S041004T002
No.2539–2/5
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