Sanyo 2SD1815 Specifications
Ordering number:EN2539B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1215/2SD1815
High-Current Switching Applications
Applications |
Package Dimensions |
· Relay drivers, high-speed inverters, converters, and |
unit:mm |
other general high-current switching applications. |
2045B |
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Features |
[2SB1215/2SD1815] |
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· Low collector-to-emitter saturation voltage. |
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· Excllent linearity of h . |
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FE |
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· Small-sized package permitting 2SB1215/2SD1815- |
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applied sets to be made small and slim. |
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· HighTf. |
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· Fast switching time. |
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1 : Base |
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2 : Collector |
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3 : Emitter |
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4 : Collector |
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SANYO : TP |
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unit:mm |
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2044B |
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[2SB1215/2SD1815] |
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1 : Base |
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2 : Collector |
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3 : Emitter |
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4 : Collector |
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SANYO : TP-FA |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/40196TS (KOTO) 8-9913/8229MO/4097TA, TS No.2539–1/5
2SB1215/2SD1815
( ) : 2SB1215
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
VCBO |
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(–)120 |
V |
Collector-to-Emitter Voltage |
VCEO |
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(–)100 |
V |
Emitter-to-Base Voltage |
VEBO |
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(–)6 |
V |
Collector Current |
IC |
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(–)3 |
A |
Collector Current (Pulse) |
ICP |
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(–)6 |
A |
Collector Dissipation |
PC |
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1 |
W |
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Tc=25˚C |
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20 |
W |
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Junction Temperature |
Tj |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C |
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Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Collector Cutoff Current |
ICBO |
VCB=(–)100V, IE=0 |
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(–)1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
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(–)1 |
µA |
DC Current Gain |
hFE1 |
VCE=(–)5V, IC=(–)0.5A |
70* |
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400* |
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hFE2 |
VCE=(–)5V, IC=(–)2A |
40 |
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Gain-Bandwidth Product |
fT |
VCE=(–)10V, IC=(–)0.5A |
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(130) |
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MHz |
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180 |
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MHz |
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Output Capacitance |
Cob |
VCB=(–)10V, f=1MHz |
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(40)25 |
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pF |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)1.5A, IB=(–)0.15A |
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150 |
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400 |
mV |
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(–200) |
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(–500) |
mV |
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Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)1.5A, IB=(–)0.15A |
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(–)0.9 |
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(–)1.2 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)120 |
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V |
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Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)100 |
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V |
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Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)6 |
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V |
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Turn-ON Time |
ton |
See specified Test Circuit |
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100 |
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ns |
Storage Time |
tstg |
See specified Test Circuit |
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(800) |
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ns |
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900 |
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ns |
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Fall Time |
tf |
See specified Test Circuit |
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50 |
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ns |
* : The 2SB1215/2SD1815 are classified by 100mA hFE as follows :
70 Q 140 100 R 200 140 S 280 200 T 400
Switching Time Test Circuit
No.2539–2/5
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