Sanyo 2SD1803 Specifications
Ordering number:EN2085B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1203/2SD1803
High-Current Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
· Low collector-to-emitter saturation voltage.
· High current and high fT.
· Excellent linearity of hFE.
· Fast switching speed.
· Small and slim package making it easy to make
2SB1203/2SD1803-applied sets smaller.
Package Dimensions
unit:mm
2045B
[2SB1203/2SD1803]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1203/2SD1803]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/8309MO/3097AT, TS No.2085–1/5
2SB1203/2SD1803
( ) : 2SB1203
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
* : The 2SB1203/2SD1803 are classified by 0.5A hFE as follows :
OBC
OEC
OBE
C
PC
C
Tc=25˚C
V
OBC
OBE
EF
hEF2VECI,V2)–(=
T
bo
no
gts
f
BC
V
BE
1VECI,V2)–(=
V
EC
V
BC
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V04)–(=
0=1)–(Aµ
E
I,V4)–(=
0=1)–(Aµ
C
A5.0)–(=
C
A4)–(=
C
I,V5)–(=
A1)–(=
C
zHM1=f,V01)–(=04)06(Fp
I,A3)–(=
B
I,A3)–(=
B
A51.0)–(=
A51.0)–(=59.0)–(3.1)–(V
I,Aµ01)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Aµ01)–(=
0=6)–(V
C
tiucriCtseTdeificepseeS)05(05sn
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS02)02(sn
sgnitaR
nimpytxam
*07*004
53
)031(zHM
081zHM
022004Vm
)082–()055–(Vm
)054(sn
005sn
06)–(V
05)–(V
6)–(V
5)–(A
8)–(A
1W
02W
˚C
˚C
tinU
Switching Time T est Circuit
041Q07002R001082S041004T002
No.2085–2/5
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