Sanyo 2SD1801 Specifications
Ordering number:EN2112B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1201/2SD1801
High-Current Switching Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
· Adoption of FBET, MBIT processes.
· Large current capacity and wide ASO.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small and slim package making it easy to make
2SB1201/2SD1801-used sets smaller.
Package Dimensions
unit:mm
2045B
[2SB1201/2SD1801]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1201/2SD1801]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112–1/5
2SB1201/2SD1801
( ) : 2SB1201
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
* : The 2SB1201/2SD1801 are classified by 100mA hFE as follows :
002R001082S041004T002065U082
OBC
OEC
OBE
C
PC
C
Tc=25˚C
V
OBC
OBE
EF
hEF2VECI,V2)–(=
T
bo
no
gts
f
BC
V
BE
1VECI,V2)–(=
V
EC
V
BC
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V05)–(=
0=001)–(An
E
I,V4)–(=
0=001)–(An
C
C
C
I,V01)–(=
C
I,A1)–(=
B
I,A1)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am001)–(=
A5.1)–(=
Am05)–(=
zHM1=f,V01)–(=21)22(Fp
Am05)–(=
Am05)–(=9.0)–(2.1)–(V
0=06)–(V
=∞ 05)–(V
EB
0=6)–(V
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS03sn
sgnitaR
nimpytxam
*001*065
04
051zHM
51.04.0V
)3.0–()7.0–(V
)054(sn
055sn
06)–(V
05)–(V
6)–(V
2)–(A
4)–(A
8.0W
51W
˚C
˚C
tinU
Switching Time T est Circuit
No.2112–2/5
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