Sanyo 2SD1801 Specifications

Ordering number:EN2112B

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1201/2SD1801

High-Current Switching Applications

Applications

· Voltage regulators, relay drivers, lamp drivers, electrical equipment.

Features

·Adoption of FBET, MBIT processes.

·Large current capacity and wide ASO.

·Low collector-to-emitter saturation voltage.

·Fast switching speed.

·Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller.

Package Dimensions

unit:mm

2045B

[2SB1201/2SD1801]
1	: Base
2	: Collector
3	: Emitter
4	: Collector

SANYO : TP

unit:mm

2044B

[2SB1201/2SD1801]
1	: Base
2	: Collector
3	: Emitter
4	: Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112–1/5

2SB1201/2SD1801

( ) : 2SB1201

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		(–)60	V
Collector-to-Emitter Voltage	VCEO		(–)50	V
Emitter-to-Base Voltage	VEBO		(–)6	V
Collector Current	IC		(–)2	A
Collector Current (Pulse)	ICP		(–)4	A
Collector Dissipation	PC		0.8	W
		Tc=25˚C	15	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=(–)50V, IE=0			(–)100	nA
Emitter Cutoff Current	IEBO	VEB=(–)4V, IC=0			(–)100	nA
DC Current Gain	hFE1	VCE=(–)2V, IC=(–)100mA	100*		560*
	hFE2	VCE=(–)2V, IC=(–)1.5A	40
Gain-Bandwidth Product	fT	VCE=(–)10V, IC=(–)50mA		150		MHz
Output Capacitance	Cob	VCB=(–)10V, f=1MHz		(22)12		pF
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=(–)1A, IB=(–)50mA		0.15	0.4	V
				(–0.3)	(–0.7)	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=(–)1A, IB=(–)50mA		(–)0.9	(–)1.2	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=(–)10µA, IE=0	(–)60			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=(–)1mA, RBE=∞	(–)50			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=(–)10µA, IC=0	(–)6			V
Turn-ON Time	ton	See specified Test Circuit		60		ns
Storage Time	tstg	See specified Test Circuit		(450)		ns
				550		ns
Fall Time	tf	See specified Test Circuit		30		ns

* : The 2SB1201/2SD1801 are classified by 100mA hFE as follows :

100 R 200 140 S 280 200 T 400 280 U 560

Switching Time Test Circuit

No.2112–2/5