Sanyo 2SD1800 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Epitaxial Planar Silicon Transistor

Driver Applications

Ordering number:EN2111B

2SD1800

21599TH (KT)/8309MO/D156TA, TS No.2111–1/4

6.5

2.3

0.5

1.55.5

0.8

7.0

1.2

2.5

5.0

0.85

0.5

1.2

0~0.2

2.3 2.3

0.6

12

4

3

Package Dimensions

unit:mm

2045B

[2SD1800]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

unit:mm

2044B

[2SD1800]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

Applications

· Relay drivers, hammer drivers, lamp drivers, motor

drivers.

Features

· High DC current gain (h

FE

≥4000).

· Large current capacity.

· Small and slim package making it easy to make

2SD1800-applied sets smaller.

2.3

2.3

5.0

6.5

0.85

0.7

0.6

1.5

5.5

7.0

0.8

1.6

7.5

0.5

1.2

2.3

0.5

1

23

4

2SD1800

No.2111–2/4

Specifications

Absolute Maximum Ratings at Ta = 25˚C

˚C

˚C

Electrical Characteristics at Ta = 25˚C

Tc=25˚C

Electrical Connection

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

OBC

08V

egatloVrettimE-ot-rotcelloCV

OEC

05V

egatloVesaB-ot-rettimEV

OBE

01V

tnerruCrotcelloCI

C

5.1A

)esluP(tnerruCrotcelloCI

PC

3A

noitapissiDrotcelloCP

C

1W

01W

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

retemaraPlobmySsnoitidnoC

sgnitaR

tinU

nimpytxam

tnerruCffotuCrotcelloCI

OBC

V

BC

I,V04=

E

0=001An

tnerruCffotuCrettimEI

OBE

V

BE

I,V8=

C

0=001An

niaGtnerruCCD

h

EF

1V

EC

I,V2=

C

Am005=

0004

h

EF

2V

EC

I,V2=

C

Am01=

0003

tcudorPhtdiwdnaB-niaGf

T

V

EC

I,V01=

C

Am05=

021zHM

egatloVnoitarutaSrettimE-ot-rotcelloCV

)tas(EC

I

C

I,Am005=

B

Am5.0=

9.05.1V

egatloVnoitarutaSrettimE-ot-esaBV

)tas(EB

I

C

I,Am005=

B

Am5.0=5.10.2V

egatloVnwodkaerBesaB-ot-rotcelloCV

OBC)RB(

I

C

I,Aµ01=

E

0=

08V

egatloVnwodkaerBrettimE-ot-rotcelloCV

OEC)RB(

I

C

R,Am1=

EB

=∞ 05V

egatloVnwodkaerBesaB-ot-rettimEV

OBE)RB(

I

E

I,Aµ01=

C

0=

01V