SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Driver Applications
Ordering number:EN2111B
2SD1800
2.3
2.3
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
Applications
· Relay drivers, hammer drivers, lamp drivers, motor
drivers.
Features
· High DC current gain (hFE≥4000).
· Large current capacity.
· Small and slim package making it easy to make
2SD1800-applied sets smaller.
Package Dimensions
unit:mm
2045B
[2SD1800]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
unit:mm
2044B
0.85
0.6
6.5
5.0
1243
0.8
2.3 2.3
[2SD1800]
1.55.5
7.0
2.5
SANYO : TP
2.3
0.5
0.5
1.2
1 : Base
1.2
0~0.2
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
21599TH (KT)/8309MO/D156TA, TS No.2111–1/4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
C
PC
C
hEF1VECI,V2=
hEF2VECI,V2=
T
2SD1800
OBC
OEC
OBE
Tc=25˚C
nimpytxam
V
OBC
V
OBE
V
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V04=
BC
BE
EC
0=001An
E
I,V8=
0=001An
C
Am005=
C
Am01=
C
I,V01=
Am05=
C
I,Am005=
Am5.0=
B
I,Am005=
Am5.0=5.10.2V
B
I,Aµ01=
0=
E
R,Am1=
=∞ 05V
EB
I,Aµ01=
0=
C
0004
0003
08V
01V
08V
05V
01V
5.1A
3A
1W
01W
˚C
˚C
sgnitaR
021zHM
9.05.1V
tinU
Electrical Connection
No.2111–2/4