Sanyo 2SD1725 Specifications

Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Large Current Switching Applications
Ordering number:ENN2048B
2SB1168/2SD1725
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Relay drivers, high-speed inverters, converters.
Package Dimensions
unit:mm
2043B
Features
· Low collector-to-emitter saturation voltage.
[2SB1168/2SD1725]
8.0
2.0
4.0
2.7
· High fT.
· Excellent linearity of hFE.
9.0
· Short switching time.
Specifications
( ) : 2SB1168
1.6
0.8
0.8
0.6
2.4
123
4.8
11.015.5
1.5
3.0
0.5
1 : Emitter 2 : Collector
1.2
3 : Base SANYO : TO-126LP
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
PC
C
Tc=25˚C
021)–(V
001)–(V
6)–(V
4)–(A
8)–(A
2.1W 02W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
hEF1VECI,V5)–(= hEF2VECI,V5)–(=
V
OBC OBE
T
BC
V
BE
V
EC
I,V001)–(=
0=1)–(Aµ
E
I,V4)–(=
0=1)–(Aµ
C
A5.0)–(=
C
A3)–(=
C
I,V01)–(=
A5.0)–(=
C
nimpytxam
* : The 2SB1168/2SD1725 are classified by 0.5A hFE as follows : Continued on next page.
knaRQ R S T
h
EF
041ot07002ot001082ot041004ot002
sgnitaR
*07*004
04
)031(zHM
081zHM
tinU
20701TS TA-3150, 3153/92098HA (KT)/4137KI/D176TA, TS No.2048–1/5
Page 2
2SB1168/2SD1725
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
PW=20µs D.C.≤1%
B1
I
B2
bo
no
gts
f
V I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
OUTPUT
BC
I,A2)–(=
B
I,A2)–(=
B
zHM1=f,V01)–(=)56(04Fp A2.0)–(= A2.0)–(=9.0)–(2.1)–(V
I,Aµ01)–(=
0=021)–(V
E
R,Am1)–(=
=∞ 001)–(V
EB
I,Aµ01)–(=
0=6)–(V
C
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)002–()005–(Vm
051004Vm
)001(sn 001sn 009sn
)008(sn
)05(05sn
tinU
INPUT
V
50Ω
R
IC=10IB1= --10IB2=2A For PNP, the polarity is reversed.
I
--5mA
--4mA
C
I
C
--3mA
--2mA
--5
2SB1168 From top
--100mA
--4
--90mA
--80mA
–A
--70mA
C
--3
--60mA
--50mA
--2
Collector Current, I
--1
0
0 --1 --2 --5--4--3
Collector-to-Emitter Voltage, VCE–V
--2.0
--1.6
–A
C
--1.2
--0.8
Collector Current, I
--0.4
--10mA
--9mA
--8mA
--7mA
--6mA
0
0 --10 --20 --50--40--30
Collector-to-Emitter Voltage, VCE–V
R
B
+
100µF 470µF
-- V
CE
-- V
CE
--1mA
IB=0
--20mA
--10mA
--5mA
--2mA
IB=0
+
VCC=50VVBE= --5V
--40mA
--30mA
2SB1168
R
L
ITR09128
ITR09130
I
5
2SD1725 From top 60mA
4
50mA 40mA
–A
C
3
2
Collector Current, I
1
0
012 543
C
90mA 80mA 70mA
Collector-to-Emitter Voltage, VCE–V
I
2.0
C
8mA
1.6
–A
C
1.2
7mA
6mA
5mA
4mA
0.8
Collector Current, I
0.4
0
01020 504030
3mA
2mA
Collector-to-Emitter Voltage, VCE–V
-- V
-- V
CE
100mA
30mA
20mA
10mA
5mA
2mA
IB=0
ITR09129
CE
2SD1725
1mA
IB=0
ITR09131
No.2048–2/5
Page 3
--5
--4
–A
C
--3
IC -- V
BE
2SB1168/2SD1725
2SB1168 VCE= --5V
5
4
–A
C
3
IC -- V
BE
2SD1725 VCE=5V
--2
Collector Current, I
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
1000
7 5
3 2
FE
100
7 5
3
DC Current Gain, h
2
10
7 5
--0.01
5
3
2
– MHz
T
100
7 5
3
2
Gain-Bandwidth Product, f
10
5 3
2
--1000
(sat) – mV
5
CE
3 2
--100
5 3
Collector-to-Emitter
Saturation Voltage, V
2
--10
--0.01
°C
Ta=75°C
25°C
--25
Base-to-Emitter Voltage, VBE–V
hFE -- I
Ta=75
C
°C
25°C
--25
°C
23 55
--0.1
Collector Current, IC–A
fT -- I
--1.0 --10
C
2SB1168 / 2SD1725
2SD1725
2SB1168
(For PNP, minus sign is omitted.) (For PNP, minus sign is omitted.)
23 5 523 57 7
0.1
Collector Current, IC–A
VCE(sat) -- I
1.0
C
25°C
°C
Ta=75
--25°C
2355
Collector Current, IC–A
23 5 3 5
--0.1
--1.0 --10
2
ITR09132
2SB1168 VCE= --5V
5
23523
ITR09134
VCE=10V
23
ITR09136
2SB1168 IC / IB=10
ITR09138
2
Collector Current, I
1
0
0 0.2 0.4 0.6 0.8 1.21.0
Base-to-Emitter Voltage, VBE–V
1000
7 5
3 2
FE
100
7 5
3
DC Current Gain, h
2
10
7 5
0.01
3
2
100
7 5
3
2
Output Capacitance, Cob – pF
10
7 5
1.0 10
5 3
2
1000
7
(sat) – mV
5
CE
3 2
100
7 5
3
Collector-to-Emitter
Saturation Voltage, V
2
10
0.01
23 55
Collector-to-Base Voltage, VCB-- V
Ta=75
2355
hFE -- I
Ta=75
25°C
--25
0.1
Collector Current, IC–A
Cob -- V
2SD1725
273575
VCE(sat) -- I
°C
Collector Current, IC–A
25°C
--25°C
23 5 3 5
0.1
°C
°C
Ta=75
25°C
--25
C
°C
°C
1.0 10
CB
2SB1168 / 2SD1725
2SB1168
22735
C
1.0 10
ITR09133
2SD1725 VCE=5V
5
23523
ITR09135
f=1MHz
100
ITR09137
2SD1725 IC / IB=10
2
ITR09139
No.2048–3/5
Page 4
--10
2SB1168/2SD1725
VBE(sat) -- I
7 5
C
2SB1168 IC / IB=10
10
7 5
VBE(sat) -- I
C
2SD1725 IC / IB=10
3
(sat) – V
2
BE
--1.0 7 5
Base-to-Emitter
Saturation Voltage, V
3 2
5
--0.01
2
10
ICP=8A
IC=4A
5 3
2
–A
C
1.0 5
3 2
0.1 5
Collector Current, I
3 2
0.01
(For PNP, minus sign is omitted).
5
24
25°C
°C
Ta= --25
75°C
--0.1 --1.0 --10
Collector Current, IC–A
23 523 523 5
A S O
2SB1168 / 2SD1725
Single pulse
100ms
10ms
DC operation Tc=25
DC operation Ta=25
22533
1.0 10
Collector-to-Emitter Voltage, VCE–V
P
-- Tc
C
1ms
°C
°C
22535
2SB1168 / 2SD1725
ITR09140
Tc=25
100
ITR09142
°C
3
(sat) – V
2
BE
1.0 7 5
Base-to-Emitter
Saturation Voltage, V
3 2
5
1.4
1.2
–W
1.0
C
0.8
0.6
0.4
Collector Dissipation, P
0.2
0
0 20 40 60 100 120 16014080
Ta= --25
0.01
Ambient Temperature, Ta – ˚C
25°C
°C
75°C
0.1 1.0 10
Collector Current, IC–A
P
-- Ta
C
2SB1168 / 2SD1725
No heat sink
23 523523 5
ITR09141
ITR09094
20
–W
16
C
12
8
4
Collector Dissipation, P
0
0 20 40 60 100 120 16014080
Case Temperature, Tc – ˚C
ITR09095
No.2048–4/5
Page 5
2SB1168/2SD1725
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice.
PS No.2048–5/5
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