Ordering number:2047A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1167/2SD1724
100V/3A Switching Applications
Features
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage.
· High fT.
· Excellent linearity of hFE.
· Fast switching time.
( ) : 2SB1167
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2043A
[2SB1167/2SD1724]
B : Base
C : Collector
E : Emitter
SANYO : TO-126LP
OBC
OEC
OBE
Tc=25˚C
021)–(V
001)–(V
6)–(V
3)–(A
6)–(A
2.1W
02W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
hEF2VECI,V5)–(=
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SB1167/2SD1724 are classified by 0.5A hFE as follows :
OBC
OBE
1VECI,V5)–(=
EF
T
bo
V
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
I,V001)–(=
BC
BE
EC
BC
0=1)–(Aµ
E
I,V4)–(=
0=1)–(Aµ
C
A5.0)–(=
C
A2)–(=
C
I,V01)–(=
A5.0)–(=
C
zHM1=f,V01)–(=)04(52Fp
041Q07002R001082S041004T002
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4137KI/D176TA, TS No.2047–1/4
sgnitaR
*07*004
04
)031(zHM
081zHM
tinU
2SB1167/2SD1724
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I,A5.1)–(=
B
I,A5.1)–(=
B
I,Aµ01)–(=
R,Am1)–(=
I,Aµ01)–(=
A51.0)–(=
A51.0)–(=9.0)–(2.1)–(V
0=021)–(V
E
=∞ 001)–(V
EB
0=6)–(V
C
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS)05(05sn
Switching Time T est Circuit
sgnitaR
nimpytxam
)002–()005–(Vm
051004Vm
)001(sn
001sn
009sn
)008(sn
tinU
No.2047–2/4