Sanyo 2SD1723 Specifications
Ordering number:2021A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1166/2SD1723
50V/8A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage.
· High fT.
· Excellent linearity of hFE.
· Fast switchint time.
( ) : 2SB1166
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SB1166/2SD1723 are classified by 0.5A hFE as follows :
OBC
OEC
OBE
C
PC
C
V
OBC
V
OBE
1VECI,V2)–(=
EF
hEF2VECI,V2)–(=
V
T
V
bo
Tc=25˚C
BC
BE
EC
BC
Package Dimensions
unit:mm
2043A
[2SB1166/2SD1723]
B : Base
C : Collector
E : Emitter
SANY O : TO-126LP
sgnitaR
nimpytxam
I,V04)–(=
0=1)–(Aµ
E
I,V4)–(=
0=1)–(Aµ
C
A5.0)–(=
C
A6)–(=
C
I,V5)–(=
A1)–(=
C
zHM1=f,V01)–(=)59(56Fp
041Q07002R001082S041004T002
*07*004
53
081zHM
)031(zHM
06)–(V
05)–(V
6)–(V
8)–(A
21)–(A
2.1W
02W
˚C
˚C
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4137KI/D176TA, TS No.2021–1/4
2SB1166/2SD1723
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egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
I
)tas(EB
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
no
gts
f
I,A4)–(=
C
C
C
C
E
A2.0)–(=
B
I,A4)–(=
A2.0)–(=59.0)–(3.1)–(V
B
I,Aµ01)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Aµ01)–(=
0=6)–(V
C
tiucriCtseTdeificepseeS05)05(sn
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS)02(02sn
Switching Time T est Circuit
sgnitaR
nimpytxam
002004Vm
)052–()005–(Vm
005sn
)054(sn
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No.2021–2/4
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