Sanyo 2SD1722 Specifications
Ordering number:2046A
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PNP/NPN Epitaxial Planar Silicon Transistors |
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2SB1165/2SD1722 |
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50V/5A Switching Applications |
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Applications |
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Package Dimensions |
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· Relay drivers, high-speed inverters, converters. |
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unit:mm |
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Features |
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2043A |
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[2SB1165/2SD1722] |
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· Low collector-to-emitter saturation voltage. |
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· HighTf. |
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· Excellent linearity of h . |
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FE |
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· Fast switching time. |
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B : Base
C : Collector
E : Emitter
( ) : 2SB1165
Specifications |
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SANYO : TO-126LP |
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Absolute Maximum Ratings at Ta = 25˚C |
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Parameter |
Symbol |
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Conditions |
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Ratings |
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Unit |
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Collector-to-Base Voltage |
VCBO |
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(–)60 |
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V |
Collector-to-Emitter Voltage |
VCEO |
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(–)50 |
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V |
Emitter-to-Base Voltage |
VEBO |
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(–)6 |
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V |
Collector Current |
IC |
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(–)5 |
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A |
Collector Current (Pulse) |
ICP |
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(–)8 |
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A |
Collector Dissipation |
PC |
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1.2 |
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W |
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Tc=25˚C |
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20 |
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W |
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Junction Temperature |
Tj |
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150 |
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˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
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˚C |
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Electrical Characteristics at Ta = 25˚C |
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Parameter |
Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
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typ |
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max |
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Collector Cutoff Current |
ICBO |
VCB=(–)40V, IE=0 |
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(–)1 |
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µA |
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Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
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(–)1 |
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µA |
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DC Current Gain |
hFE1 |
VCE=(–)2V, IC=(–)0.5A |
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70* |
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400* |
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hFE2 |
VCE=(–)2V, IC=(–)4A |
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35 |
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Gain-Bandwidth Product |
fT |
VCE=(–)5V, IC=(–)1A |
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180 |
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MHz |
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(130) |
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MHz |
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Output Capacitance |
Cob |
VCB=(–)10V, f=1MHz |
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40(60) |
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pF |
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* : The 2SB1165/2SD1722 are classified by 0.5A hFE as follows : |
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70 Q 140 |
100 R 200 |
140 S 280 |
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200 |
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T 400 |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4137KI/D176TA, TS No.2046–1/4
2SB1165/2SD1722
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)3A, IB=(–)0.15A |
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220 |
400 |
mV |
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(–280) |
(–550) |
mV |
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Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)3A, IB=(–)0.15A |
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(–)0.95 |
(–)1.3 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)60 |
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Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)50 |
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Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)6 |
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V |
Turn-ON Time |
ton |
See specified Test Circuit |
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(50)50 |
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Storage Time |
tstg |
See specified Test Circuit |
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500 |
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ns |
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(450) |
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ns |
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Fall Time |
tf |
See specified Test Circuit |
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20(20) |
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ns |
Switching Time Test Circuit
No.2046–2/4
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