Sanyo 2SD1684 Specifications
Ordering number:2041A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1144/2SD1684
100V/1.5A Switching Applications
Features
· Adoption of FBET and MBIT processes.
· High breakdown voltage.
· Low saturation voltage.
· Plastic-covered heat sink facilitating high-density
mounting.
( ) : 2SB1144
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Tc=25˚C
Package Dimensions
unit:mm
2042B
[2SB1144/2SD1684]
1 : Emitter
2 : Collector
3 : Base
SANY O : T O-126ML
021)–(V
001)–(V
6)–(V
5.1)–(A
0.2)–(A
5.1W
01W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
hEF2VECI,V5)–(=
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
OBC
OBE
1VECI,V5)–(=
EF
T
bo
V
BC
V
BE
V
EC
V
BC
* : The 2SB1144/2SD1684 are classified by 100mA hFE as follows :
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
I,V001)–(=
0=001)–(An
E
I,V4)–(=
0=001)–(An
C
C
C
I,V01)–(=
C
Am001)–(=
A1)–(=
Am05)–(=
zHM1=f,V01)–(=)81(11Fp
002Q001082S041004T002
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/10996TS (KOTO) 8-8500/4107KI/6106AT, TS No.2041–1/4
sgnitaR
*001*004
03
)001(zHM
021zHM
tinU
2SB1144/2SD1684
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I,Am005)–(=
B
I,Am005)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
EB
I,Aµ01)–(=
C
Am05)–(=
Am05)–(=58.0)–(2.1)–(V
0=021)–(V
=∞ 001)–(V
0=6)–(V
tiucriCtseTdeificepseeS08)08(sn
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS05)04(sn
Switching Time T est Circuit
sgnitaR
nimpytxam
)081–()005–(Vm
001003Vm
0001sn
)057(sn
tinU
No.2041–2/4
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