Sanyo 2SD1683 Specifications

Ordering number:2063A

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1143/2SD1683

50V/4A Switching Applications

Applications

· Voltage regulators, relay drivers, lamp drivers, electrical equipment.

Features

·Adoption of FBET, MBIT processes.

·Low saturation voltage.

·Large current capacity and wide ASO.

( ) : 2SB1143

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2042A

[2SB1143/2SD1683]

B : Base

C : Collector

E : Emitter

SANYO : TO-126ML

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		(–)60	V
Collector-to-Emitter Voltage	VCEO		(–)50	V
Emitter-to-Base Voltage	VEBO		(–)6	V
Collector Current	IC		(–)4	A
Collector Current (Pulse)	ICP		(–)6	A
Collector Dissipation	PC		1.5	W
		Tc=25˚C	10	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=(–)40V, IE=0			(–)1	µA
Emitter Cutoff Current	IEBO	VEB=(–)4V, IC=0			(–)1	µA
DC Current Gain	hFE1	VCE=(–)2V, IC=(–)100mA	100*		560*
	hFE2	VCE=(–)2V, IC=(–)3A	40
Gain-Bandwidth Product	fT	VCE=(–)10V, IC=(–)50mA		150		MHz
Output Capacitance	Cob	VCB=(–)10V, f=1MHz		(39)25		pF

* ; The 2SB1143/2SD1683 are classified by 100mA hFE as follows :

100 R 200 140 S 280 200 T 400 280 U 560

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92098HA (KT)/4137KI/D176TA, TS No.2063–1/4

2SB1143/2SD1683

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=(–)2A, IB=(–)100mA		(–350)	(–700)	mV
				190	500	mV
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=(–)2A, IB=(–)100mA		(–)0.94	(–)1.2	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=(–)10µA, IE=0	(–)60			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=(–)1mA, RBE=∞	(–)50			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=(–)10µA, IC=0	(–)6			V
Turn-ON Time	ton	See specified Test Circuit		(70)70		ns
Storage Time	tstg	See specified Test Circuit		(450)		ns
				650		ns
Fall Time	tf	See specified Test Circuit		(30)35		ns

Switching Time Test Circuit

No.2063–2/4