Sanyo 2SD1626 Specifications
Ordering number:1721A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1126/2SD1626
For V arious Drivers
Applications
· Relay drivers, hammer drivers, lamp drivers, motor
drivers,
Features
· High DC current gain (4000 or greater).
· Large current capacity.
· Very small size making it easy to provide highdensity, small-sized hybrid IC’s.
( ) : 2SB1126
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2038
[2SB1126/2SD1626]
Mounted on ceramic board (250mm2×0.8mm)
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
08)–(V
05)–(V
01)–(V
5.1)–(A
3)–(A
005Wm
5.1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
niaGtnerruCCD
Marking 2SB1126 : BI
2SD1626 : DI
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
hEF1VECI,V2)–(=
hEF2VECI,V2)–(=
tcudorPhtdiwdnaB-niaGf
V
OBC
OBE
T
BC
V
BE
V
EC
I,V04)–(=
0=001)–(An
E
I,V8)–(=
0=001)–(An
C
C
C
I,V01)–(=
C
Am005)–(=0004
Am01)–(=
Am05)–(=
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4107KI/3055MW, TS No.1721–1/3
0003
sgnitaR
021zHM
tinU
2SB1126/2SD1626
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egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Am005)–(=
B
I,Am005)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
EB
I,Aµ01)–(=
C
Am5.0)–(=
Am5.0)–(=5.1)–(0.2)–(V
0=08)–(V
=∞ 05)–(V
0=01)–(V
sgnitaR
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9.0)–(5.1)–(V
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No.1721–2/3
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