Sanyo 2SD1623 Specifications

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Page 1

Ordering number : ENN1727D

2SB1123 / 2SD1623

PNP / NPN Epitaxial Planar Silicon Transistors

2SB1123 / 2SD1623

High-Current Switching Applications

Applications

•

Voltage regulators, relay drivers, lamp drivers, electrical equipment.

Features

•

Adoption of FBET, MBIT processes.

•

Low collector-to-emitter saturation voltage.

•

Large current capacity and wide ASO.

•

Fast switching speed.

•

The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization.

Specifications

( ) : 2SB1123 Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I

Collector Dissipation P Junction T emperature Tj 150 °C

Storage T emperature T stg --55 to +150 °C

CBO CEO EBO

Mounted on a ceramic board (250mm2✕0.8mm)

Package Dimensions

unit : mm

2038A

[2SB1123 / 2SD1623]

4.5

1.6

0.4

0.5

1.5

0.75

3.0

1.5

2.5

4.25max

1.0

0.4

1 : Base 2 : Collector 3 : Emitter

SANYO : PCP

(--)60 V (--)50 V

(--)6 V (--)2 A (--)4 A

0.5 W

1.3 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Collector Cutoff Current I

Emitter Cutoff Current I DC Current Gain

* : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows :

Rank R S T U

100 to 200 140 to 280 200 to 400 280 to 560

Marking 2SB1123 : BF

2SD1623 : DF

CBO EBO

hFE(1) VCE=(--)2V, IC=(--)100mA 100* 560* hFE(2) VCE=(--)2V, IC=(--)1.5A 40

VCB=(--)50V, IE=0 (--)100 nA VEB=(--)4V, IC=0 (--)100 nA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ratings

min typ max

Continued on next page.

N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS

Unit

No.1727-1/5

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2SB1123 / 2SD1623

Continued from preceding page.

Parameter Symbol Conditions Gain-Bandwidth Product f

Output Capacitance Cob VCB=(--)10V, f=1MHz (22)12 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)50mA (--0.3)0.15 (--0.7)0.4 V Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1A, IB=(--)50mA (--)0.9 (--)1.2 V Collector-to-Base Breakdown Voltage V Collector-to-Emitter Breakdown Voltage V Emitter-to-Base Breakdown Voltage V Turn-ON Time t Storage Time t Fall Time t

(BR)CBOIC (BR)CEOIC (BR)EBOIE

stg

VCE=(--)10V, IC=(--)50mA 150 MHz

=(--)10µA, IE=0 (--)60 V =(--)1mA, RBE=∞ (--)50 V

=(--)10µA, IC=0 (--)6 V See specified Test Circuit. (60)60 ns See specified Test Circuit. (450)550 ns See specified Test Circuit. (30)30 ns

Switching Time Test Circuit

Ratings

min typ max

Unit

PW=20µs D.C.≤1%

INPUT

50Ω

10IB1= --10IB2=IC=500mA (For PNP, the polarity is reversed)

--2.4

--2.0

-- A

--1.6

--1.2

--0.8

Collector Current, I

--0.4

--50mA

-- V

100µF 470µF

--20mA

OUTPUT

RL=50Ω

25V--5V

--10mA

--8mA

--6mA

--4mA

--2mA

2SB1123 Pulse

2.4

50mA

2.0

-- A

1.6

1.2

0.8

Collector Current, I

0.4

40mA

25mA

-- V

15mA

2SD1623 Pulse

8mA

4mA

2mA

0 --0.4 --0.8 --2.4--2.0--1.6--1.2

Collector-to-Emitter Voltage, VCE -- V

--1200

--7mA

--1000

--800

-- mA C

--600

--400

Collector Current, I

--200

0 --2 --4 --12--10--8--6

Collector-to-Emitter Voltage, VCE -- V

--6mA

--5mA

-- V

--4mA

--3mA

--2mA

IB=0

--1mA

ITR08891

2SB1123 Pulse

IB=0

ITR08893

0 0.4 0.8 2.42.01.61.2

Collector-to-Emitter Voltage, VCE -- V

1200

7mA

1000

800

-- mA C

600

400

Collector Current, I

200

024 121086

Collector-to-Emitter Voltage, VCE -- V

6mA

5mA

-- V

4mA

IB=0

ITR08892

2SD1623 Pulse

3mA

2mA

1mA

IB=0

ITR08894

No.1727-2/5

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--1200

--1000

IC -- V

2SB1123 / 2SD1623

2SB1123 VCE= --2V

1200

1000

IC -- V

2SD1623 VCE=2V

--800

-- mA C

--600

--400

Collector Current, I

--200

0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0

Base-to-Emitter V oltage, VBE -- V

1000

7 5

100

7 5

DC Current Gain, h

3 2

23 5

--10

hFE -- I

--100

23 5 5

Collector Current, IC -- mA

fT -- I

1000

7 5

--1000

ITR08895

2SB1123 VCE= --2V

2377

ITR08897

2SB1123 VCB=10V

800

-- mA C

600

400

Collector Current, I

200

0 0.2 0.4 0.6 0.8 1.21.0

Base-to-Emitter V oltage, VBE -- V

1000

7 5

100

7 5

DC Current Gain, h

3 2

23 5

hFE -- I

100

23 5 5

Collector Current, IC -- mA

fT -- I

1000

7 5

1000

ITR08896

2SD1623 VCE=2V

2377

ITR08898

2SD1623 VCB=10V

-- MHz T

100

7 5

3 2

Gain-Bandwidth Product, f

23 5

--10

Collector Current, I

100

7 5

Output Capacitance, Cob -- pF

7 5

--1.0 --10

2735

Collector-to-Base Voltage, V

23 5

--100

Cob -- V

--1000

-- mA

2735

-- V

2377

ITR08899

2SB1123 f=1MHz

ITR08901

--100

-- MHz T

100

7 5

3 2

Gain-Bandwidth Product, f

23 5

Collector Current, I

100

Output Capacitance, Cob -- pF

2735

1.0 10

Collector-to-Base Voltage, V

23 5

100

Cob -- V

1000

-- mA

2735

-- V

2377

ITR08900

2SD1623 f=1MHz

100

ITR08902

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--100 5

--10 5

(sat) -- V

--1.0 5

--0.1 5

Collector-to-Emitter

Saturation V oltage, V

--0.01

--10

5 3

-- A C

1.0

5 3

VCE(sat) -- I

23 57 7

Collector Current, IC -- mA

--100

23 35

A S O

ICP=4A IC=2A

100ms

DC operation

2SB1123 / 2SD1623

2SB1123 IC / IB=20

--1000

2SB1123 / 2SD1623

1ms

10ms

ITR08903

100

5 2

(sat) -- V

1.0 5

0.1 5

Collector-to-Emitter

Saturation V oltage, V

0.01 10

0.8

0.6

-- W C

0.5

0.4

VCE(sat) -- I

23 57 7

100

23 35

Collector Current, IC -- mA

-- Ta

2SB1123 / 2SD1623

No heat sink

2SD1623 IC / IB=20

1000

ITR08904

0.1

Collector Current, I

Ta=25°C Single pulse

For PNP, minus sign is omitted

Mounted on a ceramic board(250mm2✕0.8mm)

2573

1.0 10

Collector-to-Emitter Voltage, VCE -- V

-- Tc

1.6

1.4

1.3

1.2

-- W C

1.0

0.8

0.6

0.4

Mounted on a ceramic board(250mm

Collector Dissipation, P

0.2

0 20 40 60 100 120 16014080

Case Temperature, Tc -- °C

257357

ITR08906

2SB1123 / 2SD1623

✕0.8mm)

IT04222

100

0.2

Collector Dissipation, P

0 20 40 60 100 120 16014080

Ambient Temperature, Ta -- °C

IT04221

No.1727-4/5

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2SB1123 / 2SD1623

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

This catalog provides information as of Nobember, 2001. Specifications and information herein are subject to change without notice.

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