Sanyo 2SD1618 Specifications
Ordering number:1784B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1118/2SD1618
Low-Voltage High-Current Amplifier,
Muting Applications
Features
· Low collector-to-emitter saturation voltage.
· Very small size making it easy to provide highdensity, small-sized hybrid IC’s.
Package Dimensions
unit:mm
2038
( ) : 2SB1118
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
* ; The 2SB1118/2SD1618 are classified by 50mA hFE as follows : Marking 2SB1118 : BA
082S041004T002065U082
OBC
OEC
OBE
C
PC
C
Mounted on ceramic board (250mm2×0.8mm)
V
OBC
OBE
EF
hEF2VECI,V2)–(=
T
BC
V
BE
1VECI,V2)–(=
V
EC
I,V51)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
C
C
Am05)–(=
Am005)–(=
I,V01)–(=
C
Am05)–(=
2SD1618 : DA
h
rank : S, T, U
FE
[2SB1118/2SD1618]
nimpytxam
*041*065
06
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
02)–(V
51)–(V
5)–(V
7.0)–(A
5.1)–(A
005Wm
3.1W
sgnitaR
052zHM
˚C
˚C
tinU
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4017KI/0216AT/2065MY, TS No.1784–1/3
2SB1118/2SD1618
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egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
ecnaticapaCtuptuOC
1I
)tas(EC
C
V
2I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
V
bo
I,Am5)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
BC
Am5.0)–(=
I,Am001)–(=
I,Am001)–(=
Am01)–(=
B
Am01)–(=8.0)–(2.1)–(V
B
0=02)–(V
=∞ 51)–(V
EB
0=5)–(V
zHM1=f,V01)–(=
sgnitaR
nimpytxam
0152Vm
)51–()53–(Vm
0308Vm
)06–()021–(Vm
8Fp
)31(Fp
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No.1784–2/3
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