Sanyo 2SD1347 Specifications
Ordering number:1244C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB985/2SD1347
Large-Current Driving Applications
Applcations
· Power supplies, relay drivers, lamp drivers, electrical
equipment.
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity and wide ASO.
( ) : 2SB985
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2006A
[2SB985/2SD1347]
EIAJ : SC-51 B : Base
SANYO : MP C : Collector
E : Emitter
06)–(V
05)–(V
6)–(V
3)–(A
6)–(A
1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
hEF2VECI,V2)–(=
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOesaBnommoCC
* : The 2SB985/2SD1347 are classified by 100mA hFE as follows :
002R001082S041004T002065U082
OBC
OBE
1VECI,V2)–(=
EF
T
bo
V
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
I,V04)–(=
BC
BE
EC
BC
0=0.1)–(Aµ
E
I,V4)–(=
0=0.1)–(Aµ
C
C
C
I,V01)–(=
C
Am001)–(=
A3)–(=
Am05)–(=051zHM
zHM1=f,V01)–(=)93(52Fp
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4077KI/D064MW/1253KI, TS No.1244–1/4
sgnitaR
*001*065
04
tinU
2SB985/2SD1347
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
)tas(EC
I
)tas(EB
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
I,A2)–(=
C
C
C
C
E
B
I,A2)–(=
B
R,Am1)–(=
IAµ01)–(=
Am001)–(=
Am001)–(=49.0)–(2.1)–(V
I,Aµ01)–(=
0=06)–(V
E
=∞ 05)–(V
EB
0=6)–(V
C
sgnitaR
nimpytxam
91.05.0V
)53.0–()7.0–(V
tinU
No.1244–2/4
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